Datasheet > JANTXV2N4261

JANTXV2N4261

更新时间： 2024-09-24 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
18页	107K
描述
TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 30MA I(C) \| TO-72

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JANTXV2N4261 数据手册

INCH-POUND

The documentation and process conversion measures necessary to

comply with this document shall be completed by 2 July 2002.

MIL-PRF-19500/511E

2 April 2002

SUPERSEDING

MIL-PRF-19500/511D

19 January 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING

TYPE 2N4261, 2N4261UB, JAN, JANTX, JANTXV AND JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon, switching transistors. Four

levels of product assurance are provided for each encapsulated device type and two levels for unencapsulated dice

as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (TO-72), figure 2 (UB) and figure 3 (JANHC, JANKC).

1.3 Maximum ratings.

ΘJA

T_Jand T

CBO

CEO

EBO

STG

= +25°C (1)

200

V dc

4.5

mA dc

°C

°C/mW

200

-65 to +200

0.860

(1) Derate linearly 1.14 mW/°C above T_A= +25°C.

1.4 Primary electrical characteristics at T_A= +25°C, unless otherwise specified.

Switching

(1)

FE1

FE2

r ’ C

b c

(1)

FE3

fe2

= 1.0 V dc

= 30 mA dc

= 1.0 V dc

= 10 V dc

= 4.0 V dc

= 1 mA dc

= 10 mA dc

I = 5 mA dc

off

f = 100 MHz

f = 31.8 MHz

Min

Max

150

2.5

3.5

See note on next page.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...18

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