Datasheet > JANTXV2N4399

JANTXV2N4399

更新时间： 2024-11-23 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
16页	85K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 30A I(C) \| TO-3

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JANTXV2N4399 数据手册

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly

different in format due to electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 1 October 1998

INCH-POUND

MIL-PRF-19500/433E

1 July 1998

SUPERSEDING

MIL-S-19500/433D

1 December 1993

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER

TYPE 2N4399 AND 2N5745 JAN, JANTX, JANTXV, AND JANS

This Specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon, high-power transistors. Four levels of product

assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1, (TO - 3).

1.3 Maximum ratings. R

= 0.875°C/W, R

= 35°C/W.

qJA

qJC

CBO

CEO

EBO

and T

STG

= +25°C

= +100°C

V dc

A dc

°C

2N4399

2N5745

115

7.5

-55 to +200

1/ Derate linearly 28.57 mW/°C above T = +25°C.

2/ Derate linearly 1.15 W/°C above T = +100°C.

1.4 Primary electrical characteristics.

Switching

FE2

CE(sat)1

BE(sat)1

obo

= 2 V dc

= 10 V dc

= 1 A dc

f = 1 MHz

= 15 A dc

= 1.5 A dc

= 15 A dc

= 1.5 A dc

= 10 V

off

= 0

= 15 A dc

= 10 A dc

100 kHz

£ f £ 1 MHz

2N4399

2N5745

2N4399 2N5745

2N4399

1.8

2N5745

2.0

V dc

Min

Max

1.0

1.5

1,000

1.2

2.5

|1/ Pulsed (see 4.5.1).

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this

document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,

Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end

of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...16

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与JANTXV2N4399相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N4416A	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4416AUB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 35V, 1-Element, N-Channel, Silicon, Junction FET, CE
JANTXV2N4449	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-46,
JANTXV2N4449U	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| LLCC
JANTXV2N4449UA	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 15V V(BR)CEO \| LLCC
JANTXV2N4449UB	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| LLCC
JANTXV2N4854	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 2-Element, NPN and PNP, Silicon, TO-78,
JANTXV2N4854U	ETC	获取价格	TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 40V V(BR)CEO \| 600MA I(C) \| TO-226(6)
JANTXV2N4856	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4857	MICROSEMI	获取价格	N-CHANNEL J-FET

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