Datasheet > JANTXV2N4957

JANTXV2N4957

更新时间： 2024-11-23 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
16页	97K
描述
TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 30MA I(C) \| TO-72

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JANTXV2N4957 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 28 March 2002.

INCH-POUND

MIL-PRF-19500/426D

28 December 2001

SUPERSEDING

MIL-PRF-19500/426C

2 November 2000

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER

TYPE 2N4957 AND 2N4957UB

JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier

transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figure 1 (T0-72) and figure 2 (surface mount).

1.3 Maximum ratings.

P_T(1)

V_CEO

V_CBO

I_C

V_EBO

T_STGand T_J

T_A= +25°C

V dc

mA dc

V dc

3.0

°C

200

-65 to +200

(1) Derate at 1.14 mW/°C above T_A> +25°C.

* 1.4 Primary electrical characteristics (common to all types).

Limits

r 'C

hFE3

V dc

I_C= 5.0

mA dc

_CE= 10

I_E= 2.0 mA

I_E= 2.0 mA dc

f = 63.6 MHz

V_CB= 10 V dc

(2N4957 only)

I_E= 2.0 mA dc

f = 63.6 MHz

V_CB= 10 V dc

(2N4957UB

only)

I_E= 0

100 kHz ≤ f ≤ 1

MHz

_CB= 10 V dc

I_C= 2.0 mA dc

f = 450 MHz

V_CE= 10 V dc

I_C= 2.0 mA dc

V_CE= 10 V dc

f = 450 MHz

V_CE= 10 V

f = 100 MHz

Min

Max

165

1.0

8.0

1.0

16.0

0.8

3.5

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O. Box

3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement

Proposal (DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...16

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与JANTXV2N4957相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N4957UB	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 30MA I(C) \| LLCC
JANTXV2N5002	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JANTXV2N5003	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JANTXV2N5004	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JANTXV2N5005	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA
JANTXV2N5010	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANTXV2N5010S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANTXV2N5011	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANTXV2N5011S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANTXV2N5012S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,

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