Datasheet > JANTXV2N5015

JANTXV2N5015

更新时间： 2023-01-02 20:06:36

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	54K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN

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中文翻译

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技术参数
数据手册

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JANTXV2N5015 技术参数

生命周期：	Active	零件包装代码：	TO-39
包装说明：	CYLINDRICAL, O-CBCY-W3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.39
JEDEC-95代码：	TO-39	JESD-30 代码：	O-CBCY-W3
端子数量：	3	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	ROUND	封装形式：	CYLINDRICAL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM

JANTXV2N5015 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/727

DEVICES

LEVELS

2N5010

2N5011

2N5012

2N5013

2N5014

2N5015

2N5010S

2N5011S

2N5012S

2N5013S

2N5014S

2N5015S

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

500

600

700

800

900

1000

500

600

700

800

900

1000

Unit

Vdc

mAdc

Collector-Emitter Voltage

2N5010

2N5011

2N5012

2N5013

2N5014

2N5015

2N5010

2N5011

2N5012

2N5013

2N5014

2N5015

V_CER

TO-5

2N5010 thru 2N5015

Collector-Base Voltage

V_CBO

Emitter-Base Voltage

Collector Current

Base Current

V_EBO

I_C

200

I_B

Total Power Dissipation

TO-39

2N5010S thru 2N5015S

@ T_A= +25°C

@ T_C= +25° C

P_t

1.0

7.0

Thermal Resistance, Junction to Case 1/

°C/W

°C

R_θJC

Operating & Storage Junction Temperature Range

T_j, T_stg

-65 to +200

Note:

1/ See 19500/727 for Thermal Derating Curves.

T4-LDS-0067 Rev. 2 (100293)

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12 3 4

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