Datasheet > JANTXV2N5109UB

JANTXV2N5109UB

更新时间： 2024-11-23 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
16页	131K
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JANTXV2N5109UB 数据手册

INCH-POUND

The documentation and process conversion measures

necessary to comply with this amendment shall be

completed by 23 June, 2001.

MIL-PRF-19500/453D

23 March 2001

SUPERSEDING

MIL-PRF-19500/453C

15 December 1997

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY

TYPES 2N5109, 2N5109UB, JAN, JANTX, JANTXV, AND JANS, JANHC and JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN silicon, VHF-UHF amplifier transistors.

Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of

product assurance are provided for die.

1.2 Physical dimensions. See figure 1 herein (similar to T0-39), figure 2 (2N5109UB) and figure 3 (JANHC2N5109,

JANKC2N5109).

1.3 Maximum ratings.

Rja

T_J

P_T(1) (2)

V_CBO

V_CEO

I_C

V_EBO

T_STG

T_A= +25°C

V dc

A dc

0.4

V dc

3.0

°C

°C/W

175

°C

+200

-65 to +200

(1) Derate at 5.71 mW/°C above T_A> +25°C.

(2) P_T= 2.9 W at T_C= +25°C, derate at 16.6 mW/°C above T_C> +25°C.

1.4 Primary electrical characteristics (common to all types).

Power gain

½h_FE

h_FE

V_CE(SAT)

I_C= 100mA dc

I_B= 10 mA dc

C_obo

Limits

V_CE= 15 V dc

I_C= 50 mA dc

I_E= 0

V_CE= 15 V dc

I_C= 50 mA dc

f = 200 MHz

I_C= 50 mA dc

f = 200 MHz

Pin = -10dB

V_CE= 15 V dc

100 kHz £ f £ 1 MHz

V_CB= 28 V dc

V dc

0.5

11.0

Min

Max

150

6.0

11.0

3.5

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, Post

Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...16

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与JANTXV2N5109UB相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N5114	MICROSEMI	获取价格	P-CHANNEL J-FET
JANTXV2N5114G	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206A
JANTXV2N5114UB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CE
JANTXV2N5115	MICROSEMI	获取价格	P-CHANNEL J-FET
JANTXV2N5115G	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206A
JANTXV2N5115UB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CE
JANTXV2N5116	MICROSEMI	获取价格	P-CHANNEL J-FET
JANTXV2N5116G	VISHAY	获取价格	Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206A
JANTXV2N5116UB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CE
JANTXV2N5151	MICROSEMI	获取价格	PNP POWER SILICON TRANSISTOR

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