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JANTXV2N5152 PDF预览

JANTXV2N5152

更新时间: 2024-11-23 05:11:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 62K
描述
NPN POWER SILICON TRANSISTOR

JANTXV2N5152 数据手册

 浏览型号JANTXV2N5152的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 544  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N5152  
2N5152L  
2N5154  
2N5154L  
MAXIMUM RATINGS  
Ratings  
Symbol  
VCEO  
All Units  
80  
Units  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
100  
Vdc  
VCBO  
5.5  
Vdc  
VEBO  
(3, 4)  
TO- 5*  
2N5152L, 2N5154L  
2.0  
Adc  
IC  
Total Power Dissipation  
@ TA = +250C(1)  
@ TC = +250C(2)  
1.0  
11.8  
W
W
PT  
Tj, T  
Operating & Storage Temperature Range  
-65 to +200  
°C  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 5.7 mW/0C for TA > +250C  
2) Derate linearly 66.7 mW/0C for TC > +250C  
3) Derate linearly 80 mW/0C for TC > +250C  
4) This value applies for PW £ 8.3 ms, duty cycle £ 1%  
Symbol  
Max.  
15  
Unit  
0C/W  
R
qJC  
2N5152, 2N5154  
TO-39*  
(TO-205AD)  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc, IB = 0  
Emitter-Base Cutoff Current  
VEB = 4.0 Vdc, IC = 0  
Symbol  
V(BR)CEO  
IEBO  
Min.  
Max.  
Unit  
80  
Vdc  
1.0  
1.0  
mAdc  
mAdc  
VEB = 5.5 Vdc, IC = 0  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc, VBE = 0  
VCE = 100 Vdc, VBE = 0  
1.0  
1.0  
mAdc  
mAdc  
ICES  
Collector-Base Cutoff Current  
VCE = 40 Vdc, IB = 0  
50  
ICEO  
mAdc  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

JANTXV2N5152 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N5152 MICROSEMI

完全替代

NPN POWER SILICON TRANSISTOR

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TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 5A I(C) | TO-5