是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BCY | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.16 | Is Samacsys: | N |
外壳连接: | GATE | 配置: | SINGLE |
最小漏源击穿电压: | 30 V | 最大漏源导通电阻: | 100 Ω |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 7 pF |
JEDEC-95代码: | TO-206AA | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
参考标准: | MIL-19500/476C | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N5115G | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206A | |
JANTXV2N5115UB | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CE | |
JANTXV2N5116 | MICROSEMI |
获取价格 |
P-CHANNEL J-FET | |
JANTXV2N5116G | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-206A | |
JANTXV2N5116UB | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CE | |
JANTXV2N5151 | MICROSEMI |
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PNP POWER SILICON TRANSISTOR | |
JANTXV2N5151L | MICROSEMI |
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PNP POWER SILICON TRANSISTOR | |
JANTXV2N5151U3 | MICROSEMI |
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PNP POWER SILICON TRANSISTOR | |
JANTXV2N5152 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
JANTXV2N5152L | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR |