Datasheet > JANTXV2N5005

JANTXV2N5005

更新时间： 2024-11-23 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
16页	203K
描述
TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 5A I(C) \| TO-210AA

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JANTXV2N5005 数据手册

The documentation process conversion

measures necessary to comply with this

revision shall be completed by 20 March 1998

INCH-POUND

MIL-PRF-19500/535B

20 December 1997

SUPERSEDING

MIL-S-19500/535A(USAF)

28 January 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER

TYPES 2N5003, 2N5005, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed

power-switching applications. Four levels of product assurance are provided for each device type as specified in MIL-PRF-

19500. Two levels of product assurance are provided for unencapsulated die.

1.2 Physical dimensions. See figure 1 (T6-C, similar to T0-59) and figure 2 (JANHC and JANKC).

1.3 Maximum ratings.

P_T1/

P_T2/

V_CBO

V_CEO

V_EBO

I_C

I_C3/

Reverse

pulse 4/

energy

T_stg

and

T_J

T_A= +25 C

T_C= +25 C

V dc

100

V dc

5.5

A dc

-65 to +200

1/ Derate linearly 11.4 mW/ C for T_A> +25 C

2/ Derate linearly 331 mW/ C for T_C> +25 C

3/ This value applies for P_W8.3 ms, duty cycle 1 percent.

4/ This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit

of figure 4.

1.4. Primary electrical characteristics at T = +25 C.

h_FE21/

V_CE= 5 V

I_C= 2.5A

|h_fe|

V_BE(sat)21/

I_C= 5 A dc

I_B= 500 mA dc

V_CE(Sat)21/

I_C= 5 A dc

I_B= 500 mA dc

R_q

C_obo

V_CB= 10 V dc

I_E= 0

V_CE= 5 V

Limits

I_C= 500 mA dc

f = 10 MHz

f = 1 MHz

2N5003 2N5005 2N5003

2N5005

V dc

2.2

V dc

1.5

C/W

Min

Max

200

250

1/ Pulsed (see 4.5.1)

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN:

DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document

Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

FSC 5961

12 3 4 5 6 7...16

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与JANTXV2N5005相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N5010	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANTXV2N5010S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANTXV2N5011	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANTXV2N5011S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANTXV2N5012S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANTXV2N5013	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANTXV2N5013S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANTXV2N5014	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANTXV2N5014S	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 900V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
JANTXV2N5015	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1000V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,

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