是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.16 |
外壳连接: | GATE | 配置: | SINGLE |
最小漏源击穿电压: | 30 V | 最大漏源导通电阻: | 60 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 8 pF |
JEDEC-95代码: | TO-206AA | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.36 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500/385 | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTXV2N4861UB | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SU | |
JANTXV2N4865 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 90A I(C) | STR-1/2 | |
JANTXV2N4930 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 50MA I(C) | TO-39 | |
JANTXV2N4930U4 | MICROSEMI |
获取价格 |
Transistor | |
JANTXV2N4931 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 50MA I(C) | TO-39 | |
JANTXV2N4931U4 | MICROSEMI |
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Transistor | |
JANTXV2N4957 | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-72 | |
JANTXV2N4957UB | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | LLCC | |
JANTXV2N5002 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA | |
JANTXV2N5003 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-210AA |