5秒后页面跳转
JANTXV2N4930U4 PDF预览

JANTXV2N4930U4

更新时间: 2024-11-24 06:27:55
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
24页 698K
描述
Transistor

JANTXV2N4930U4 数据手册

 浏览型号JANTXV2N4930U4的Datasheet PDF文件第2页浏览型号JANTXV2N4930U4的Datasheet PDF文件第3页浏览型号JANTXV2N4930U4的Datasheet PDF文件第4页浏览型号JANTXV2N4930U4的Datasheet PDF文件第5页浏览型号JANTXV2N4930U4的Datasheet PDF文件第6页浏览型号JANTXV2N4930U4的Datasheet PDF文件第7页 
INCH-POUND  
The documentation and process conversion measures  
necessary to comply with this document shall be  
completed by 4 May 2010.  
MIL-PRF-19500/397J  
4 February 2010  
SUPERSEDING  
MIL-PRF-19500/397H  
17 June 2004  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON,  
TYPES 2N3743, 2N3743U4, 2N4930, 2N4930U4, 2N4931, AND 2N4931U4,  
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.  
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of  
product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (TO-39), figure 2 (U4), and figures 3 and 4 for JANHC and JANKC (die)  
dimensions.  
*
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.  
RθJA  
(2)  
RθJPCB  
(2)  
RθJC  
(2)  
Type  
PT (1)  
TA =  
+25°C  
W
PT (1)  
TPCB  
PT (1)  
TC =  
+25°C  
W
VCBO  
VEBO  
VCEO  
IC  
TJ and  
TSTG  
=
+25°C  
°C/W  
175  
175  
175  
°C/W  
°C/W  
30  
W
V dc  
300  
200  
250  
300  
200  
250  
V dc  
V dc  
300  
200  
250  
300  
200  
250  
mA dc  
200  
200  
200  
200  
200  
200  
°C  
2N3743  
1.0  
5
5
5
5
5
5
5
30  
2N4930  
1.0  
5
30  
2N4931  
1.0  
5
-65 to  
+200  
175  
175  
175  
15  
2N3743U4  
2N4930U4  
2N4931U4  
1.0  
1.0  
1.0  
10  
15  
10  
15  
10  
* (1) For derating see figures 5, 6, 7, and 8.  
* (2) For thermal impedance curves see figures 9, 10, and 11.  
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,  
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to  
semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this  
address information using the ASSIST Online database at https://assist.daps.dla.mil .  
AMSC N/A  
FSC 5961  

与JANTXV2N4930U4相关器件

型号 品牌 获取价格 描述 数据表
JANTXV2N4931 ETC

获取价格

TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 50MA I(C) | TO-39
JANTXV2N4931U4 MICROSEMI

获取价格

Transistor
JANTXV2N4957 ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-72
JANTXV2N4957UB ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | LLCC
JANTXV2N5002 ETC

获取价格

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA
JANTXV2N5003 ETC

获取价格

TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-210AA
JANTXV2N5004 ETC

获取价格

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-210AA
JANTXV2N5005 ETC

获取价格

TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-210AA
JANTXV2N5010 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
JANTXV2N5010S MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,