Datasheet > JANTXV2N4854U

JANTXV2N4854U

更新时间： 2024-11-23 00:00:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
15页	116K
描述
TRANSISTOR \| BJT \| PAIR \| COMPLEMENTARY \| 40V V(BR)CEO \| 600MA I(C) \| TO-226(6)

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JANTXV2N4854U 数据手册

The documentation and process conversion

measures necessary to comply with this

revision shall be completed by 25 November 2001.

INCH-POUND

MIL-PRF-19500/421F

25 August 2001

SUPERSEDING

MIL-PRF-19500/421E

2 April 1998

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP,

COMPLEMENTARY, SILICON TYPES 2N3838, 2N4854, AND 2N4854U

JAN, JANTX, AND JANTXV

This specification is approved for use by all Departments

and Agencies the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for unitized, dual transistors which contain a

pair of electrically isolated complementary NPN and PNP silicon triode transistors in one package. Three levels of

product assurance are provided for each device type as specified in MIL-PRF-19500.

1.2 Polarity designation. Voltages and currents of limits and test conditions shown herein apply to the NPN triode.

For the PNP triode, the values are the same, but the polarity designations shall be the opposite.

1.3 Physical dimensions. See figures 1 (6 lead flatpak), 2 (similar to T0-77), and 3 (surface mount).

1.4 Maximum ratings.

V_CBO

P_Tat T_A= +25 C

P_Tat T_C= +25 C (1)

2N3838 (4) 2N4854 (5)

2N3838 (2)

One Total

2N4854 (3)

One

Total

One

Total

One

Total

Transistor

Device

Transistor

Device

Transistor

Device

Transistor

Device

V dc

0.25

0.35

0.30

0.60

0.7

1.4

1.0

2.0

Lead to case voltage

V dc

V_EBO

V_CEO

V_1C-2C

V dc

I_C

T_J

T_STG

V dc

MA dc

600

120

200

-55 to +200

(1) T_Crating do not apply to surface mount devices (2N4854U).

(2) For T_A> +25 C, derate linearly 1.43 mW/ C one transistor, 2.00 mW/ C both transistors.

(3) For T_A> +25 C, derate linearly 1.71 mW/ C one transistor, 3.43 mW/ C both transistors.

(4) For T_C> +25 C, derate linearly 4.0 mW/ C one transistor, 8.0 mW/ C both transistors.

(5) For T_C> +25 C, derate linearly 5.71 mW/ C one transistor, 11.43 mW/ C both transistors.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,

P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD

Form 1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...15

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与JANTXV2N4854U相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N4856	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4857	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4858	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4858UB	MICROSEMI	获取价格	暂无描述
JANTXV2N4859	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4859UB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SU
JANTXV2N4860	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4860UB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SU
JANTXV2N4861	MICROSEMI	获取价格	N-CHANNEL J-FET
JANTXV2N4861UB	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SU

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