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JANTXV2N4239 PDF预览

JANTXV2N4239

更新时间: 2024-01-20 23:57:58
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其他 - ETC 晶体晶体管
页数 文件大小 规格书
15页 52K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-5

JANTXV2N4239 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
最大集电极电流 (IC):1 A配置:Single
最高工作温度:175 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.8 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):1 MHz
Base Number Matches:1

JANTXV2N4239 数据手册

 浏览型号JANTXV2N4239的Datasheet PDF文件第2页浏览型号JANTXV2N4239的Datasheet PDF文件第3页浏览型号JANTXV2N4239的Datasheet PDF文件第4页浏览型号JANTXV2N4239的Datasheet PDF文件第5页浏览型号JANTXV2N4239的Datasheet PDF文件第6页浏览型号JANTXV2N4239的Datasheet PDF文件第7页 
The documentation process conversion measures  
necessary to comply with this revision shall be  
completed by 10 December 1999.  
INCH-POUND  
MIL-PRF-19500/581A  
10 September 1999  
SUPERSEDING  
MIL-S-19500/581  
23 April 1990  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER,  
TYPES 2N4237, 2N4238 AND 2N4239 JAN, JANTX AND JANTXV  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN , silicon, amplifier transistors. Three levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1, (TO-39).  
1.3 Maximum ratings. Unless otherwise specified, T = +25 C.  
°
A
Type  
P
T
1/  
P
T
V
CBO  
V
CEO  
V
EBO  
I
C
I
B
T and T  
op STG  
T
= +25 C T = +25 C  
° °  
C
A
1/  
2/  
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
C
°
2N4237  
2N4238  
2N4239  
1.0  
1.0  
1.0  
6.0  
6.0  
6.0  
50  
80  
100  
40  
60  
80  
6.0  
6.0  
6.0  
1.0  
1.0  
1.0  
0.5  
0.5  
0.5  
-65 to +200  
-65 to +200  
-65 to +200  
1/ Derate linearly 5.7 mW/ C for T > +25 C;  
°
°
A
1/ Derate linearly 34 mW/ C for T > +25 C;  
°
°
C
1.4 Primary electrical characteristics at T = +25 C.  
°
A
h
FE  
at V  
CE = 1.0 V dc 1/  
V
V
I
CE(sat)2 1/  
BE(sat)2 1/  
/h  
fe  
f = 10 MHz  
/
C
obo  
f = 1.0 MHz  
Limits  
R
JC  
q
I
C = 1.0 A dc  
C = 1.0 A dc  
max  
I
I
B = 0.1 A dc  
V
V
h
h
h
FE3  
B = 0.1 A dc  
CE = 10 V dc CB = 10 V dc  
I
FE1  
FE2  
I
I
C
= 100 mA dc I = 250 mA dc I = 500 mA dc  
C C  
C = 100 mA dc  
C = 0  
C
°
pF  
V dc  
1.5  
Min  
30  
30  
30  
3.0  
Max  
150  
29  
100  
0.6  
1 Pulsed see 4.5.1.  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this  
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,  
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end  
of this document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  

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