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JANS2N6676

更新时间： 2024-11-04 14:51:43
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
31页 468K
描述
Transistor

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中文翻译

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JANS2N6676 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：compliant风险等级：5.06
Is Samacsys：N最大集电极电流 (IC)：15 A
配置：Single最小直流电流增益 (hFE)：8
最高工作温度：175 °C极性/信道类型：NPN
最大功率耗散 (Abs)：175 W子类别：Other Transistors
表面贴装：NO标称过渡频率 (fT)：15 MHz
Base Number Matches：1

JANS2N6676 数据手册

 浏览型号JANS2N6676的Datasheet PDF文件第2页浏览型号JANS2N6676的Datasheet PDF文件第3页浏览型号JANS2N6676的Datasheet PDF文件第4页浏览型号JANS2N6676的Datasheet PDF文件第5页浏览型号JANS2N6676的Datasheet PDF文件第6页浏览型号JANS2N6676的Datasheet PDF文件第7页 
The documentation and process conversion measures  
necessary to comply with this document shall be  
completed by 10 May 2011.  
INCH-POUND  
MIL-PRF-19500/538F  
10 February 2011  
SUPERSEDING  
MIL-PRF-19500/538E  
25 April 2009  
PERFORMANCE SPECIFICATION SHEET  
* SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,  
TYPES 2N6676, 2N6678, 2N6676T1, 2N6678T1, 2N6676T3, 2N6678T3, 2N6691, AND 2N6693,  
JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA,  
JANKCA, JANKCAM, JANKCAD, JANKCAP, JANKCAL, JANKCAR, JANKCAF, JANKCAG, AND JANKCAH  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
*
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four levels  
of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product  
assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to  
eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators “M”, “D”, “P“,  
“L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements.  
*
1.2 Physical dimensions. See figure 1 (TO-3) - 2N6676, 2N6678; figure 2 (TO-61) - 2N6691, 2N6693, figure 3  
(TO-254AA) - 2N6676T1, 2N6678T1, figure 4 (TO-257AA) - 2N6676T3, 2N6678T3, and figure 5 (JANHC and  
JANKC).  
1.3 Maximum ratings.  
RθJC  
(2)  
Types  
PT  
PT  
VCBO and  
VCEX  
VCEO  
TJ and TSTG  
TA = +25°C  
TC = +25°C (1)  
W
6
6
4
4
6
6
W
175  
175  
(3) 125  
(3) 125  
175  
V dc  
450  
650  
450  
650  
450  
650  
V dc  
300  
400  
300  
400  
300  
400  
°C/W  
1.0  
1.0  
1.3  
1.3  
1.0  
1.0  
°C  
2N6676, 2N6676T1  
2N6678, 2N6678T1  
2N6676T3  
2N6678T3  
2N6691  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
-65 to +200  
2N6693  
175  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since  
contact information can change, you may want to verify the currency of this address information using the  
ASSIST Online database at https://assist.daps.dla.mil .  
AMSC N/A  
FSC 5961  
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JANS2N6678 MICROSEMI

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JANS2N6760 MICROSEMI

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 		Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal
JANS2N6764 MICROSEMI

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 		Power Field-Effect Transistor, 38A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Me
JANS2N6766 MICROSEMI

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 		Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Me
JANS2N6768 MICROSEMI

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 		Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta
JANS2N6782 MICROSEMI

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 		Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
JANS2N6784 MICROSEMI

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 		Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me
JANS2N6786 MICROSEMI

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 		Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me
JANS2N6796 MICROSEMI

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 		N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

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