是否无铅: | 含铅 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.65 |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 38 A | 最大漏源导通电阻: | 0.055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-3 |
JESD-30 代码: | O-MBFM-P2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANS2N6766 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N6768 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Meta | |
JANS2N6782 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
JANS2N6784 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N6786 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me | |
JANS2N6796 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANS2N6796E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANS2N6796U | MICROSEMI |
获取价格 |
Small Signal Field-Effect Transistor, | |
JANS2N6798 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 | |
JANS2N6798E3 | MICROSEMI |
获取价格 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |