型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXXA50N60B3 | IXYS |
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Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-263AA, TO-263AA | |
IXXA50N60B3 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXAA1 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package | |
IXXAA3 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package | |
IXXAB1 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package | |
IXXAB3 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package | |
IXXBA1 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package | |
IXXBA3 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package | |
IXXBB1 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package | |
IXXBB3 | MMD |
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6.0mm x 3.5 mm 2 Pads Ceramic Package |