生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.12 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXXH30N60C3 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXH30N60C3D1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXH30N65C4D1 | LITTELFUSE |
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这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热 | |
IXXH40N65C4D1 | LITTELFUSE |
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这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热 | |
IXXH50N60B3 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXXH50N60B3D1 | IXYS |
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Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD | |
IXXH50N60B3D1 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXXH50N60C3 | IXYS |
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Extreme Light Punch Through IGBT for 20-60 kHz Switching | |
IXXH50N60C3 | LITTELFUSE |
获取价格 |
该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXH50N60C3D1 | IXYS |
获取价格 |
Extreme Light Punch Through IGBT for 20-60 kHz Switching |