型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXXH30N60B3D1 | IXYS |
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XPTTM 600V IGBT GenX3TM w/ Diode | |
IXXH30N60B3D1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXH30N60C3 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXH30N60C3D1 | LITTELFUSE |
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该系列器件通过最先进的GenX3? IGBT工艺和超轻Punch Through (XPT | |
IXXH30N65C4D1 | LITTELFUSE |
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这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热 | |
IXXH40N65C4D1 | LITTELFUSE |
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这些器件采用我们专有的XPT?薄晶圆技术和最先进的Trench IGBT工艺开发,具有低热 | |
IXXH50N60B3 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXXH50N60B3D1 | IXYS |
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Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD | |
IXXH50N60B3D1 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, | |
IXXH50N60C3 | IXYS |
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Extreme Light Punch Through IGBT for 20-60 kHz Switching |