Datasheet > IXTQ60N20L2

IXTQ60N20L2

更新时间： 2024-02-03 05:04:41

品牌	Logo	应用领域
IXYS		局域网放大器脉冲晶体管
页数	文件大小	规格书
5页	151K
描述
Power Field-Effect Transistor, 60A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

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IXTQ60N20L2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

IXTQ60N20L2 数据手册

IXTT60N20L2 IXTQ60N20L2

IXTH60N20L2

Symbol

Test Conditions

Characteristic Values

TO-3P (IXTQ) Outline

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 0.5 • I_D25, Note 1

V_GS= 0V, V_DS= 25V, f = 1MHz

C_iss

C_oss

C_rss

10.5

1080

255

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 1Ω (External)

Q_g(on)

Q_gs

255

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

R_thJC

R_thCS

0.23 °C/W

°C/W

(TO-247&TO-3P)

0.25

Safe Operating Area Specification

Symbol

SOA

Test Conditions

Min.

Typ.

Max.

V_DS= 160V, I_D= 1.88A, T_C= 75°C, tp = 3s

300

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

TO-247 (IXTH) Outline

I_S

V_GS= 0V

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

240

1.4

∅ P

t_rr

I_RM

Q_RM

330

25.0

4.13

μC

I_F= 30A, -di/dt = 100A/μs,

V_R= 75V, V_GS= 0V

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

TO-268 (IXTT) Outline

Terminals: 1 - Gate

3 - Source

2 - Drain

Tab - Drain

Dim.

Millimeter

Inches

Min. Max.

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

∅P 3.55

3.65

.140 .144

5.89

6.40 0.232 0.252

4.32

5.49

.170 .216

242 BSC

6.15 BSC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,727,585

7,005,734 B2 7,157,338B2

7,063,975 B2

6,534,343

6,583,505

6,710,405 B2 6,759,692

6,710,463

6,771,478 B2 7,071,537

123 4 5

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