5秒后页面跳转
IXTP4N70X2 PDF预览

IXTP4N70X2

更新时间: 2024-11-18 21:08:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 383K
描述
Power Field-Effect Transistor,

IXTP4N70X2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.35
Base Number Matches:1

IXTP4N70X2 数据手册

 浏览型号IXTP4N70X2的Datasheet PDF文件第2页浏览型号IXTP4N70X2的Datasheet PDF文件第3页浏览型号IXTP4N70X2的Datasheet PDF文件第4页浏览型号IXTP4N70X2的Datasheet PDF文件第5页浏览型号IXTP4N70X2的Datasheet PDF文件第6页浏览型号IXTP4N70X2的Datasheet PDF文件第7页 
Preliminary Technical Information  
X2-Class  
Power MOSFET  
VDSS = 700V  
ID25 = 4A  
RDS(on) 850m  
IXTU4N70X2  
IXTY4N70X2  
IXTA4N70X2  
IXTP4N70X2  
N-Channel Enhancement Mode  
TO-251 (IXTU)  
G
D
S
D (Tab)  
TO-252 (IXTY)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
700  
700  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-263 (IXTA)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
4
8
A
A
D (Tab)  
TO-220 (IXTP)  
IA  
TC = 25C  
TC = 25C  
2
A
EAS  
150  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
80  
V/ns  
W
G
D
S
TJ  
-55 ... +150  
150  
C  
C  
C  
D (Tab)  
TJM  
Tstg  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
FC  
Md  
Mounting Force (TO-263 & TO-251)  
Mounting Torque (TO-220)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-251  
TO-252  
TO-263  
TO-220  
0.40  
0.35  
2.50  
3.00  
g
g
g
g
Low Package Inductance  
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
700  
V
2.5  
4.5  
V
Applications  
100 nA  
A  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
5
TJ = 125C  
50 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
850 m  
Robotics and Servo Controls  
DS100779B(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXTP4N70X2相关器件

型号 品牌 获取价格 描述 数据表
IXTP4N70X2M IXYS

获取价格

Power Field-Effect Transistor,
IXTP4N70X2M LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTP4N80 IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTP4N80A ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-220AB
IXTP4N80P IXYS

获取价格

PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTP4N80P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTP4N90 IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTP4N90A LITTELFUSE

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTP4N95 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 4A I(D) | TO-220AB
IXTP4N95A LITTELFUSE

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,