Datasheet > IXTP150N15X4A

IXTP150N15X4A

更新时间： 2024-01-29 22:37:10

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	237K
描述
Power Field-Effect Transistor,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXTP150N15X4A 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

IXTP150N15X4A 数据手册

Advance Technical Information

X4-Class

V_DSS= 150V

I_D25= 150A

R_DS(on) 7.2m

IXTP150N15X4A

Power MOSFET^TM

AEC Q101 Qualified

N-Channel Enhancement Mode

Avalanche Rated

TO-220

(IXTP)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 175C

150

V_DGR

T_J= 25C to 175C, R_GS= 1M

D (Tab)

V_GSS

V_GSM

Continuous

Transient

20

30

G = Gate

= Drain

S = Source

Tab = Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

150

260

I_A

T_C= 25C

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

480

Features

T_J

-55 ... +175

175

C



International Standard Package

Low R_DS(ON)and Q_G

Avalanche Rated

T_JM

T_stg



-55 ... +175

Low Package Inductance

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque

1.13 / 10

Nm/lb.in

Advantages

Weight



High Power Density

Easy to Mount



Space Savings

Applications

Symbol

Test Conditions

Characteristic Values



Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

150



2.5

4.5



100 nA

I_DSS

10 A

T_J= 150C

500 A

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

6.2

7.2 m

DS100940A(9/18)

12 3 4 5 6

中文翻译

下载PDF

与IXTP150N15X4A相关器件

型号	品牌	获取价格	描述	数据表
IXTP152N085T	IXYS	获取价格	Preliminary Technical Information TrenchMVTM Power MOSFET
IXTP15N25MA	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTP15N25MB	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTP15N30MA	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTP15N30MB	IXYS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTP15N50L2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTP15N50L2	IXYS	获取价格	Power Field-Effect Transistor, 15A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Met
IXTP15P15T	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTP160N04T2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTP160N04T2	IXYS	获取价格	Power Field-Effect Transistor, 160A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Me