是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 15 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 125 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTP15N30MB | IXYS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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IXTP15N50L2 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |
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IXTP15N50L2 | IXYS |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Met |
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IXTP15P15T | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |
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IXTP160N04T2 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |
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IXTP160N04T2 | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Me |
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IXTP160N075T | IXYS |
获取价格 |
Preliminary Technical Information TrenchMVTM Power MOSFET |
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IXTP160N075T | LITTELFUSE |
获取价格 |
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(ON)极低,因此确保了非常低 |
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IXTP160N085T | IXYS |
获取价格 |
Power Field-Effect Transistor, 160A I(D), 85V, 0.006ohm, 1-Element, N-Channel, Silicon, Me |
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IXTP160N10T | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |
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