生命周期: | Transferred | Reach Compliance Code: | compliant |
风险等级: | 8.37 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTA24P085T | IXYS |
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Power Field-Effect Transistor, 24A I(D), 85V, 0.065ohm, 1-Element, P-Channel, Silicon, Met | |
IXTA24P085T | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTA260N055T2 | IXYS |
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Power Field-Effect Transistor, 260A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, M | |
IXTA260N055T2 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTA260N055T2-7 | IXYS |
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Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode | |
IXTA260N055T2-7 | LITTELFUSE |
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这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能 | |
IXTA26P10T | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTA26P10T | IXYS |
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Power Field-Effect Transistor, 26A I(D), 100V, 0.09ohm, 1-Element, P-Channel, Silicon, Met | |
IXTA26P20P | IXYS |
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P-Channel Enhancement Mode Avalanche Rated | |
IXTA26P20P | LITTELFUSE |
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Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( |