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IXTA24N65X2 PDF预览

IXTA24N65X2

更新时间: 2024-10-28 21:10:11
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 288K
描述
Power Field-Effect Transistor

IXTA24N65X2 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:8.37Base Number Matches:1

IXTA24N65X2 数据手册

 浏览型号IXTA24N65X2的Datasheet PDF文件第1页浏览型号IXTA24N65X2的Datasheet PDF文件第2页浏览型号IXTA24N65X2的Datasheet PDF文件第3页浏览型号IXTA24N65X2的Datasheet PDF文件第5页浏览型号IXTA24N65X2的Datasheet PDF文件第6页 
IXTA24N65X2 IXTP24N65X2  
IXTH24N65X2  
Fig. 8. Input Admittance  
Fig. 7. Maximum Drain Current vs. Case Temperature  
28  
24  
20  
16  
12  
8
36  
32  
28  
24  
20  
16  
12  
8
T
J
= 125oC  
25oC  
- 40oC  
4
4
0
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
T
J
= - 40oC  
70  
60  
50  
40  
30  
20  
10  
0
25oC  
125oC  
T
J
= 125oC  
T
J
= 25oC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
ID - Amperes  
VSD - Volts  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
10  
8
100000  
10000  
1000  
100  
= 1 MHz  
f
V
I
= 325V  
DS  
= 12A  
D
I
= 10mA  
G
C
C
iss  
6
4
oss  
rss  
10  
2
1
C
0
0.1  
0
4
8
12  
16  
20  
24  
28  
32  
36  
1
10  
100  
1000  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
VDS - Volts  

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