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IXTA24N65X2 PDF预览

IXTA24N65X2

更新时间: 2024-02-19 03:04:15
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IXYS /
页数 文件大小 规格书
6页 288K
描述
Power Field-Effect Transistor

IXTA24N65X2 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:8.37Base Number Matches:1

IXTA24N65X2 数据手册

 浏览型号IXTA24N65X2的Datasheet PDF文件第1页浏览型号IXTA24N65X2的Datasheet PDF文件第2页浏览型号IXTA24N65X2的Datasheet PDF文件第4页浏览型号IXTA24N65X2的Datasheet PDF文件第5页浏览型号IXTA24N65X2的Datasheet PDF文件第6页 
IXTA24N65X2 IXTP24N65X2  
IXTH24N65X2  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
24  
20  
16  
12  
8
V
= 10V  
V
= 10V  
8V  
GS  
GS  
50  
40  
30  
20  
10  
0
8V  
7V  
7V  
6V  
5V  
6V  
5V  
4
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 12A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
24  
20  
16  
12  
8
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
GS  
V
= 10V  
GS  
7V  
I
= 24A  
D
6V  
I
= 12A  
D
4
5V  
4V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
7
8
9
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 12A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.6  
4.2  
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
= 10V  
GS  
BV  
DSS  
T
J
= 125oC  
V
GS(th)  
T
J
= 25oC  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
160  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  

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