Datasheet > IXTA200N055T2

IXTA200N055T2

更新时间： 2023-12-06 20:13:14

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	336K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能（Tc=@25oC）。通过结合高电流额定值与紧凑的封装选择，这些尺寸更加小巧的器件能够控制更高的功率。

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IXTA200N055T2 数据手册

IXTA200N055T2

IXTP200N055T2

Symbol

Test Conditions

Characteristic Values

TO-263 Outline

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 60A, Note 1

C_iss

C_oss

C_rss

6970

1026

228

V_GS= 0V, V_DS= 25V, f = 1MHz

0.43 [11.0]

0

0.34 [8.7]

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

0.66 [16.6]

_GS= 10V, V_DS= 30V, I_D= 50A

1 - Gate

2,4 - Drain

3 - Source

0.20 [5.0]

0.10 [2.5]

60.12 [3.0]

0.06 [1.6]

R_G= 3.3 (External)

Q_g(on)

Q_gs

109

V_GS= 10V, V_DS= 0.5 • V_DSS, 0.5 • I_DSS

Q_gd

R_thJC

R_thCS

0.42 C/W

C/W

TO-220

0.50

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

200

600

1.1

I_S

V_GS= 0V

TO-220 Outline

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= 50A, V_GS= 0V, Note 1

t_rr

2.6

I_F= 100A, V_GS= 0V,

I_RM

Q_RM

-di/dt = 100A/s, V_R= 27V

EJECTOR

3X b

3X b2

ee11

Notes: 1. Pulse test, t  300s; duty cycle, d  2%.

1 - Gate

2,4 - Drain

3 - Source

2. On through-hole packages, R_DS(on)Kelvin test contact

location must be 5mm or less from the package body.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123B1

6,306,728B1

6,404,065B1

6,534,343

6,583,505

6,683,344

6,710,405B2 6,759,692

6,710,463

6,727,585

7,005,734B2 7,157,338B2

7,063,975B2

6,771,478B2 7,071,537

123 4 5 6 7

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