型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXSP16N60 | IXYS |
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Low V CE(sat) IGBT - Short Circuit SOA Capability | |
IXSP20N60B2 | IXYS |
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Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, | |
IXSP20N60B2D1 | IXYS |
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Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 | |
IXSP24N60B | IXYS |
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Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 | |
IXSP2N100 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB | |
IXSP2N100A | ETC |
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TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB | |
IXSR35N120BD1 | IXYS |
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IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside) | |
IXSR40N60BD1 | IXYS |
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IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside) | |
IXSR40N60CD1 | IXYS |
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IGBT with Diode ISOPLUS247 | |
IXSR45N120B | IXYS |
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Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN |