Datasheet > IXGH6N170

IXGH6N170

更新时间： 2024-04-02 21:14:49

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	205K
描述
功能与特色: 应用:?

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数据手册

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IXGH6N170 数据手册

IXGH6N170

IXGT6N170

Symbol

Test Conditions

Characteristic Values

TO-268 Outline

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

I_C= 6A, V_CE= 10V, Note 1

V_GE= 15V, V_CE= 10V

3.0

4.5

I_C(ON)

C_ies

C_oes

C_res

330

V_CE= 25V, V_GE= 0V, f = 1MHz

Q_g

20.0

3.6

Q_ge

Q_gc

I_C= 6A, V_GE= 15V, V_CE= 0.5 • V_CES

Terminals: 1 - Gate

2,4 - Collector

3 - Emitter

8.0

t_d(on)

t_ri

t_d(off)

t_fi

Inductive load, T_J= 25°C

I_C= 6A, V_GE= 15V

250

290

1.5

500 ns

V_CE= 0.8 • V_CES, R_G= 33

500

2.5

Note 2

E_off

t_d(on)

t_ri

Inductive load, T_J= 125°C

I_C= 6A, V_GE= 15V

E_on

t_d(off)

t_fi

0.5

300

2.0

V_CE= 0.8 • V_CES, R_G= 33

Note 2

E_off

R_thJC

R_thCK

1.65 °C/W

°C/W

TO-247 Outline

TO-247

0.21

P

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V_CE(clamp), T_Jor R_G.

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Dim.

Millimeter

Inches

Min. Max.

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

P 3.55

3.65

.140 .144

5.89

6.40 0.232 0.252

4.32

6.15 BSC

5.49

.170 .216

242 BSC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4 5

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