Datasheet > IXGH28N60A3

IXGH28N60A3

更新时间： 2024-11-25 19:58:35

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
6页	264K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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技术参数
数据手册

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IXGH28N60A3 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.64	Base Number Matches：	1

IXGH28N60A3 数据手册

Advance Technical Information

GenX3^TM600V

IGBT

V_CES= 600V

I_C110= 28A

V_CE(sat) 1.4V

IXGA28N60A3

IXGP28N60A3

IXGH28N60A3

Ultra Low Vsat PT IGBT for up

to 5kHz Switching

TO-263 (IXGA)

C (Tab)

Symbol

Test Conditions

Maximum Ratings

TO-220 (IXGP)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

±20

±30

C (Tab)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

170

TO-247 AD (IXGH)

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 10

I_CM= 48

(RBSOA)

Clamped Inductive Load

@V_CE V_CES

P_C

T_C= 25°C

190

C (Tab)

T_J

T_JM

T_stg

-55 ... +150

150

°C

G = Gate

E = Emitter

= Collector

Tab = Collector

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-247 & TO-220)

10..65 / 2.2..14.6

1.13 / 10

N/lb

Nm/lb.in



Optimized for Low Conduction Losses

Square RBSOA

International Standard Packages

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Advantages



High Power Density

Extremely Rugged

Low Gate Drive Requirement



Applications

Symbol

Test Conditions

Characteristic Values



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

(T_J= 25C, Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



5.0



25 A

250 A



T_J= 125C



I_GES

V_CE= 0V, V_GE= 20V

100 nA



Inrush Current Portection Circuits

V_CE(sat)

I_C= 24A, V_GE= 15V, Note 1

1.4

1.3

DS100725(5/16)

12 3 4 5 6

中文翻译

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