Datasheet > IXFL34N100

IXFL34N100

更新时间： 2024-01-16 19:49:37

品牌	Logo	应用领域
力特 - LITTELFUSE		/
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3页	187K
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IXFL34N100 数据手册

IXFL34N100

Symbol

Test Conditions

Characteristic Values

ISOPLUS264^TM(IXFL) Outline

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 15V, I_D= 17A, Note 1

C_iss

C_oss

C_rss

9200

1200

300

V_GS= 0V, V_DS= 25V, f = 1MHz

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 17A

R_G= 1Ω (External)

110

Note: Bottom heatsink meets

Q_g(on)

Q_gs

380

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 17A

Q_gd

185

R_thJC

R_thCS

0.225 °C/W

°C/W

0.15

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

I_S

V_GS= 0V

I_SM

V_SD

t_rr

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

136

1.3

Ref: IXYS CO 0128

180

330

300

I_F= I_S, V_GS= 0V

-di/dt = 100A/μs

V_R= 100V

T_J= 125°C

Q_RM

I_RM

μC

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.

Please see IXFN36N100 data sheet for characteristic curves.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123

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