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IXFK170N25X3 PDF预览

IXFK170N25X3

更新时间: 2024-01-25 07:49:27
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 305K
描述
Power Field-Effect Transistor,

IXFK170N25X3 技术参数

是否无铅: 不含铅生命周期:Transferred
Reach Compliance Code:unknown风险等级:8.34
Base Number Matches:1

IXFK170N25X3 数据手册

 浏览型号IXFK170N25X3的Datasheet PDF文件第1页浏览型号IXFK170N25X3的Datasheet PDF文件第3页浏览型号IXFK170N25X3的Datasheet PDF文件第4页浏览型号IXFK170N25X3的Datasheet PDF文件第5页浏览型号IXFK170N25X3的Datasheet PDF文件第6页 
IXFT170N25X3HV IXFH170N25X3  
IXFK170N25X3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
66  
110  
S
RGi  
1.3  
Ciss  
Coss  
Crss  
13.5  
2.3  
nF  
nF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
1.6  
Effective Output Capacitance  
Co(er)  
Co(tr)  
800  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
3280  
V
td(on)  
tr  
td(off)  
tf  
18  
10  
62  
7
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
RG = 5(External)  
Qg(on)  
Qgs  
190  
55  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
45  
RthJC  
RthCS  
0.14 C/W  
TO-247  
TO-264  
0.21  
0.15  
C/W  
C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
170  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
680  
1.4  
V
trr  
QRM  
IRM  
140  
770  
11  
ns  
IF = 85A, -di/dt = 100A/μs  
nC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  

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