Datasheet > IXFK140N25T

IXFK140N25T

更新时间： 2023-12-06 20:13:06

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	166K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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IXFK140N25T 数据手册

IXFK140N25T

IXFX140N25T

Symbol

Test Conditions

Characteristic Values

TO-264 (IXFK) Outline

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= 10V, I_D= 60A, Note 1

135

C_iss

C_oss

C_rss

1500

185

V_GS= 0V, V_DS= 25V, f = 1MHz

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 15V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 1Ω (External)

Millimeter

Inches

Dim.

Min.

Max.

Min.

Max.

Q_g(on)

Q_gs

255

4.82

2.54

2.00

5.13

2.89

2.10

.190

.100

.079

.202

.114

.083

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

1.12

2.39

2.90

1.42

2.69

3.09

.044

.094

.114

.056

.106

.122

R_thJC

R_thCS

0.13 °C/W

°C/W

0.53

0.83

.021

1.020

.780

.033

1.030

.786

25.91 26.16

19.81 19.96

5.46 BSC

0.15

.215 BSC

0.00

0.25

.000

.010

20.32 20.83

.800

.090

.820

.102

2.29

2.59

3.17

3.66

.125

.144

6.07

8.38

6.27

8.69

.239

.330

.247

.342

Source-Drain Diode

3.81

1.78

4.32

2.29

.150

.070

.170

.090

6.04

1.57

6.30

1.83

.238

.062

.248

.072

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

140

560

1.3

PLUS 247^TM(IXFX) Outline

I_S

V_GS= 0V

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= 60A, V_GS= 0V, Note 1

t_rr

200

µC

I_F= 70A, -di/dt = 100A/µs

V_R= 75V, V_GS= 0V

Q_RM

I_RM

0.60

9.30

Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

Dim.

Millimeter

Inches

Min. Max.

A₁

A₂

4.83

2.29

1.91

5.21

2.54

2.16

.190 .205

.090 .100

.075 .085

ADVANCE TECHNICAL INFORMATION

b₁

b₂

1.14

1.91

2.92

1.40

2.13

3.12

.045 .055

.075 .084

.115 .123

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

0.61

20.80 21.34

15.75 16.13

0.80

.024 .031

.819 .840

.620 .635

5.45 BSC

.215 BSC

19.81 20.32

.780 .800

.150 .170

3.81

4.32

5.59

4.32

6.20

4.83

.220 0.244

.170 .190

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

123 4 5 6

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