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IXFA130N15X3TRL PDF预览

IXFA130N15X3TRL

更新时间: 2024-11-18 20:09:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 162K
描述
Power Field-Effect Transistor,

IXFA130N15X3TRL 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

IXFA130N15X3TRL 数据手册

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Preliminary Technical Information  
X3-Class HiPerFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 130A  
RDS(on) 9m  
IXFA130N15X3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25C to 150C  
150  
150  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
G = Gate  
S = Source  
D
= Drain  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Tab = Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
130  
230  
A
A
IA  
TC = 25C  
TC = 25C  
65  
A
J
EAS  
1.2  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
Features  
390  
International Standard Package  
Low RDS(ON) and QG  
Avalanche Rated  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Low Package Inductance  
TL  
dT/dt  
Maximum Lead Temperature for Soldering  
Heating / Cooling rate, 175C - 210C  
300  
50  
°C  
°C/min  
Advantages  
TSOLD  
1.6 mm (0.062in.) from Case for 10s  
260  
10..65 / 2.2..14.6  
2.5  
°C  
N/lb  
g
FC  
Mounting Force  
High Power Density  
Easy to Mount  
Weight  
Space Savings  
Applications  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1.5mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
2.5  
4.5  
V
100 nA  
A  
IDSS  
5
TJ = 125C  
300 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
9 m  
DS100902A(4/17)  
© 2018 IXYS CORPORATION, All Rights Reserved  

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