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IXFA12N50P PDF预览

IXFA12N50P

更新时间: 2024-11-18 11:13:59
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 144K
描述
Polar Power MOSFET HiperFET

IXFA12N50P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:TO-263, 3 PIN针数:4
Reach Compliance Code:not_compliant风险等级:8.33
其他特性:AVALANCHE RATED雪崩能效等级(Eas):600 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFA12N50P 数据手册

 浏览型号IXFA12N50P的Datasheet PDF文件第2页浏览型号IXFA12N50P的Datasheet PDF文件第3页浏览型号IXFA12N50P的Datasheet PDF文件第4页浏览型号IXFA12N50P的Datasheet PDF文件第5页 
PolarTM Power MOSFET  
HiperFETTM  
IXFA12N50P  
IXFP12N50P  
VDSS = 500V  
ID25 = 12A  
RDS(on) 500mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
(TAB)  
ID25  
IDM  
TC = 25°C  
12  
30  
A
A
TO-220 (IXFP)  
TC = 25°C, pulse width limited by TJM  
IA  
EAS  
TC = 25°C  
TC = 25°C  
12  
600  
A
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
(TAB)  
G
D
S
200  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
TL  
1.6mm (0.062) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Features  
TSOLD  
Md  
Mounting torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
z International standard packages  
z Unclamped Inductive Switching  
(UIS) rated  
z Low package inductance  
- easy to drive and to protect  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
500  
V
V
3.0  
5.5  
±100 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 125°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
500 mΩ  
DS99436F(04/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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