Datasheet > IXFA12N80P

IXFA12N80P

更新时间： 2024-11-19 05:32:23

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	123K
描述
Power Field-Effect Transistor, 12A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFA12N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFA 12N80P

IXFH 12N80P

IXFP 12N80P

V_DSS= 800 V

I_D2512 A

R_DS(on)≤ 1.1 Ω

t_rr

≤ 250 ns

N-Channel Enhancement Mode

TO-263 (IXFA)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Tranisent

(TAB)

V_GSM

I_D25

I_DM

T_C= 25°C

TO-247 (IXFH)

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

E_AR

E_AS

T_C= 25°C

1.2

(TAB)

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

TO-220 (IXFP)

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

(TAB)

T_L

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

250

°C

M_d

Mounting torque

(TO-220, TO-247)

1.13/10 Nm/lb.in.

G = Gate

D = Drain

S = Source

TAB = Drain

Weight

TO-247

T0-220 & TO-263

Features

Symbol

Test Conditions

Characteristic Values

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V_DC, V_DS= 0

800

3.0

5.0

100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

μA

T_J= 125°C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25, Note 1

1.1

High power density

DS99476E(10/05)

12 3 4 5

中文翻译

下载PDF

与IXFA12N80P相关器件

型号	品牌	获取价格	描述	数据表
IXFA130N10T	IXYS	获取价格	TrenchMV Power MOSFET HiperFET
IXFA130N10T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXFA130N10T2	IXYS	获取价格	TrenchT2 HiperFET Power MOSFET
IXFA130N10T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXFA130N15X3	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFA130N15X3	IXYS	获取价格	Power Field-Effect Transistor,
IXFA130N15X3TRL	IXYS	获取价格	Power Field-Effect Transistor,
IXFA14N60P	IXYS	获取价格	PolarHV HiperFET Power MOSFET
IXFA14N60P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFA14N60P3	LITTELFUSE	获取价格	Power Field-Effect Transistor,