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ISL9N312AD3 PDF预览

ISL9N312AD3

更新时间: 2024-11-07 22:11:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
11页 270K
描述
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

ISL9N312AD3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251AA包装说明:IPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.1
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ISL9N312AD3 数据手册

 浏览型号ISL9N312AD3的Datasheet PDF文件第2页浏览型号ISL9N312AD3的Datasheet PDF文件第3页浏览型号ISL9N312AD3的Datasheet PDF文件第4页浏览型号ISL9N312AD3的Datasheet PDF文件第5页浏览型号ISL9N312AD3的Datasheet PDF文件第6页浏览型号ISL9N312AD3的Datasheet PDF文件第7页 
June 2002  
ISL9N312AD3 / ISL9N312AD3ST  
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs  
®
General Description  
Features  
This device employs a new advanced trench MOSFET  
technology and features low gate charge while maintaining  
low on-resistance.  
Fast switching  
r
r
= 0.010(Typ), V = 10V  
GS  
DS(ON)  
DS(ON)  
= 0.017(Typ), V = 4.5V  
Optimized for switching applications, this device improves  
the overall efficiency of DC/DC converters and allows  
operation to higher switching frequencies.  
GS  
Q (Typ) = 13nC, V = 5V  
g
GS  
Q
(Typ) = 4.5nC  
gd  
ISS  
Applications  
DC/DC converters  
C
(Typ) = 1450pF  
D
S
D
G
G
I-PAK  
(TO-251AA)  
S
D-PAK  
(TO-252)  
G D S  
MOSFET Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
V
V
DSS  
GS  
±20  
Drain Current  
o
50  
32  
A
A
Continuous (T = 25 C, V = 10V)  
C
GS  
o
I
Continuous (T = 100 C, V = 4.5V)  
C GS  
D
o
o
Continuous (T = 25 C, V = 10V, R = 52 C/W)  
θJA  
11  
A
C
GS  
Pulsed  
Figure 4  
A
Power dissipation  
Derate above 25 C  
75  
0.5  
W
W/ C  
P
o
o
D
o
T , T  
Operating and Storage Temperature  
-55 to 175  
C
J
STG  
Thermal Characteristics  
o
R
R
R
Thermal Resistance Junction to Case TO-251, TO-252  
2
C/W  
θJC  
θJA  
θJA  
o
Thermal Resistance Junction to Ambient TO-251, TO-252  
100  
52  
C/W  
2
o
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area  
C/W  
Package Marking and Ordering Information  
Device Marking  
N312AD  
Device  
Package  
TO-252AA  
TO-251AA  
Reel Size  
330mm  
Tube  
Tape Width  
16mm  
Quantity  
ISL9N312AD3ST  
ISL9N312AD3  
2500 units  
50 units  
N312AD  
NA  
©2002 Fairchild Semiconductor Corporation  
ISL9N312AD3 / ISL9N312AD3ST Rev C  

ISL9N312AD3 替代型号

型号 品牌 替代类型 描述 数据表
FDU6692 FAIRCHILD

类似代替

30V N-Channel PowerTrench MOSFET
FDU8882_NL FAIRCHILD

功能相似

N-Channel PowerTrench MOSFET
FDU8882 FAIRCHILD

功能相似

N-Channel PowerTrench MOSFET

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ISL9N312AD3ST ROCHESTER

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暂无描述
ISL9N312AD3ST_NL ROCHESTER

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ISL9N312AS3STS62Z FAIRCHILD

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