是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | TO-252AA | 包装说明: | DPAK-3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.13 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.012 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | NOT SPECIFIED | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ISL9N312AD3ST_NL | FAIRCHILD |
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暂无描述 | |
ISL9N312AD3ST_NL | ROCHESTER |
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50A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | |
ISL9N312AP3 | FAIRCHILD |
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N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs | |
ISL9N312AS3ST | FAIRCHILD |
获取价格 |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs | |
ISL9N312AS3ST_NL | FAIRCHILD |
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Power Field-Effect Transistor, 58A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N312AS3STL99Z | FAIRCHILD |
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Power Field-Effect Transistor, 58A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N312AS3STS62Z | FAIRCHILD |
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Power Field-Effect Transistor, 58A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
ISL9N315AD3 | FAIRCHILD |
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N-Channel Logic Level PWM Optimized UltraFET?? Trench Power MOSFETs | |
ISL9N315AD3ST | FAIRCHILD |
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N-Channel Logic Level PWM Optimized UltraFET?? Trench Power MOSFETs | |
ISL9N316AD3ST | FAIRCHILD |
获取价格 |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |