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ISL9N316AP3 PDF预览

ISL9N316AP3

更新时间: 2024-11-24 23:59:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
11页 140K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 48A I(D) | TO-220AB

ISL9N316AP3 数据手册

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January 2002  
ISL9N316AP3/ISL9N316AS3ST  
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs  
General Description  
Features  
This device employs a new advanced trench MOSFET  
technology and features low gate charge while maintaining  
low on-resistance.  
• Fast switching  
• r  
• r  
= 0.014(Typ), V = 10V  
GS  
DS(ON)  
DS(ON)  
= 0.020(Typ), V = 4.5V  
Optimized for switching applications, this device improves  
the overall efficiency of DC/DC converters and allows  
operation to higher switching frequencies.  
GS  
• Q (Typ) = 13nC, V = 5V  
g
GS  
• Q (Typ) = 4.5nC  
gd  
Applications  
• DC/DC converters  
• C  
(Typ) = 1450pF  
ISS  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
D
S
G
GATE  
SOURCE  
DRAIN  
(FLANGE)  
TO-263AB  
TO-220AB  
MOSFET Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
V
V
Drain to Source Voltage  
Gate to Source Voltage  
DSS  
GS  
20  
Drain Current  
o
48  
28  
A
A
Continuous (T = 25 C, V = 10V)  
C
GS  
o
I
Continuous (T = 100 C, V = 4.5V)  
C GS  
D
o
o
Continuous (T = 25 C, V = 10V, R = 43 C/W)  
θJA  
11  
A
C
GS  
Pulsed  
Figure 4  
A
Power dissipation  
Derate above 25 C  
65  
0.43  
W
W/ C  
P
o
o
D
o
T , T  
Operating and Storage Temperature  
-55 to 175  
C
J
STG  
Thermal Characteristics  
o
R
R
R
Thermal Resistance Junction to Case TO-220, TO-263  
2.31  
62  
C/W  
θJC  
θJA  
θJA  
o
Thermal Resistance Junction to Ambient TO-220, TO-263  
C/W  
2
o
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area  
43  
C/W  
Package Marking and Ordering Information  
Device Marking  
N316AS  
Device  
ISL9N316AS3ST  
ISL9N316AP3  
Package  
TO-263AB  
TO-220AB  
Reel Size  
330mm  
Tube  
Tape Width  
24mm  
N/A  
Quantity  
800 units  
50  
N316AP  
©2002 Fairchild Semiconductor Corporation  
Rev. B, January 2002  

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