5秒后页面跳转
ISL9R1560S2 PDF预览

ISL9R1560S2

更新时间: 2024-11-24 22:26:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
6页 163K
描述
15A, 600V Stealth⑩ Diode

ISL9R1560S2 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-262
包装说明:R-PSIP-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
其他特性:FREEWHEELING DIODE, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.2 VJEDEC-95代码:TO-262
JESD-30 代码:R-PSIP-T2JESD-609代码:e0
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.04 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ISL9R1560S2 数据手册

 浏览型号ISL9R1560S2的Datasheet PDF文件第2页浏览型号ISL9R1560S2的Datasheet PDF文件第3页浏览型号ISL9R1560S2的Datasheet PDF文件第4页浏览型号ISL9R1560S2的Datasheet PDF文件第5页浏览型号ISL9R1560S2的Datasheet PDF文件第6页 
November 2002  
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S  
15A, 600V Stealth™ Diode  
General Description  
Features  
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 1.2  
b a  
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and  
ISL9R1560S3S are Stealth™ diodes optimized for low loss  
performance in high frequency hard switched applications. The  
Stealth™ family exhibits low reverse recovery current  
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 30ns  
rr  
o
Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 C  
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
Avalanche Energy Rated  
(I  
) and exceptionally soft recovery under typical  
RM(REC)  
operating conditions.  
This device is intended for use as a free wheeling or boost  
diode in power supplies and other power switching  
Applications  
Switch Mode Power Supplies  
Hard Switched PFC Boost Diode  
UPS Free Wheeling Diode  
Motor Drive FWD  
applications. The low I  
and short t phase reduce loss  
a
RM(REC)  
in switching transistors. The soft recovery minimizes ringing,  
expanding the range of conditions under which the diode may  
be operated without the use of additional snubber circuitry.  
Consider using the Stealth™ diode with an SMPS IGBT to  
provide the most efficient and highest power density design at  
lower cost.  
SMPS FWD  
Snubber Diode  
Formerly developmental type TA49410.  
Package  
Symbol  
JEDEC TO-220AC  
JEDEC STYLE TO-247  
ANODE  
K
CATHODE  
CATHODE  
(FLANGE)  
ANODE  
CATHODE  
CATHODE  
(BOTTOM SIDE  
METAL)  
A
JEDEC STYLE TO-262  
JEDEC TO-263AB  
ANODE  
CATHODE  
(FLANGE)  
CATHODE  
CATHODE  
(FLANGE)  
N/C  
ANODE  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
600  
600  
600  
15  
Units  
V
V
Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
V
V
V
R
o
I
Average Rectified Forward Current (T = 145 C)  
A
F(AV)  
C
I
Repetitive Peak Surge Current (20kHz Square Wave)  
30  
A
FRM  
I
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
200  
A
FSM  
©2002 Fairchild Semiconductor Corporation  
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1  

与ISL9R1560S2相关器件

型号 品牌 获取价格 描述 数据表
ISL9R1560S3S FAIRCHILD

获取价格

15A, 600V Stealth⑩ Diode
ISL9R1560S3ST FAIRCHILD

获取价格

600 V Reverse Voltage and High Reliability
ISL9R1560S3ST ONSEMI

获取价格

15A,600V,STEALTH™ 二极管
ISL9R1560S3ST_NL FAIRCHILD

获取价格

Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB,
ISL9R18120G2 FAIRCHILD

获取价格

18A, 1200V Stealth⑩ Diode
ISL9R18120G2 ONSEMI

获取价格

18 A、1200 V STEALTH™ 二极管
ISL9R18120G2_NL FAIRCHILD

获取价格

暂无描述
ISL9R18120P2 FAIRCHILD

获取价格

18A, 1200V Stealth⑩ Diode
ISL9R18120S3S FAIRCHILD

获取价格

18A, 1200V Stealth⑩ Diode
ISL9R18120S3ST FAIRCHILD

获取价格

Rectifier Diode, 1 Phase, 1 Element, 18A, 1200V V(RRM), Silicon, TO-263AB, LEAD FREE, D2PA