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ISL9R30120G2 PDF预览

ISL9R30120G2

更新时间: 2024-11-26 11:14:59
品牌 Logo 应用领域
安森美 - ONSEMI 软恢复二极管快速软恢复二极管局域网肖特基二极管
页数 文件大小 规格书
8页 5891K
描述
30A,1200V,STEALTH™ 肖特基二极管

ISL9R30120G2 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:TO-247, 2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.87Is Samacsys:N
其他特性:FREE WHEELING DIODE, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):3.1 VJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:325 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.1 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ISL9R30120G2 数据手册

 浏览型号ISL9R30120G2的Datasheet PDF文件第2页浏览型号ISL9R30120G2的Datasheet PDF文件第3页浏览型号ISL9R30120G2的Datasheet PDF文件第4页浏览型号ISL9R30120G2的Datasheet PDF文件第5页浏览型号ISL9R30120G2的Datasheet PDF文件第6页浏览型号ISL9R30120G2的Datasheet PDF文件第7页 
STEALTHt Diode  
30 A, 1200 V  
ISL9R30120G2  
Description  
The ISL9R30120G2 is a STEALTH diode optimized for low loss  
performance in high frequency hard switched applications.  
The STEALTH family exhibits low reverse recovery current (I  
and exceptionally soft recovery under typical operating conditions.  
)
RR  
www.onsemi.com  
This device is intended for use as a free wheeling or boost diode  
in power supplies and other power switching applications. The low  
I
and short ta phase reduce loss in switching transistors. The soft  
RR  
CATHODE  
(BOTTOM SIDE  
METAL)  
recovery minimizes ringing, expanding the range of conditions under  
which the diode may be operated without the use of additional snubber  
circuitry. Consider using the STEALTH diode with an SMPS IGBT  
to provide the most efficient and highest power density design at lower  
cost.  
ANODE  
CATHODE  
TO2472LD  
CASE 340CL  
Features  
Stealth Recovery t = 269 ns (@ I = 30 A)  
rr  
F
SYMBOL  
Max Forward Voltage, V = 3.3 V (@ T = 25°C)  
F
C
1200 V Reverse Voltage and High Reliability  
Avalanche Energy Rated  
This Device is PbFree and is RoHS Compliant  
K
Applications  
Switch Mode Power Supplies  
Hard Switched PFC Boost Diode  
UPS Free Wheeling Diode  
Motor Drive FWD  
A
MARKING DIAGRAM  
SMPS FWD  
Snubber Diode  
$Y&Z&3&K  
R30120G2  
$Y  
= ON Semiconductor Logo  
&Z  
&3  
&K  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
R30120G2  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
March, 2020 Rev. 3  
ISL9R30120G2/D  

ISL9R30120G2 替代型号

型号 品牌 替代类型 描述 数据表
ISL9R30120G2_NL FAIRCHILD

功能相似

Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, T
ISL9R30120G2 FAIRCHILD

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