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ISL9R1560S3ST PDF预览

ISL9R1560S3ST

更新时间: 2024-11-26 11:14:11
品牌 Logo 应用领域
安森美 - ONSEMI 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 488K
描述
15A,600V,STEALTH™ 二极管

ISL9R1560S3ST 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:4 weeks
风险等级:1.26其他特性:FREEWHEELING DIODE, SNUBBER DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.04 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

ISL9R1560S3ST 数据手册

 浏览型号ISL9R1560S3ST的Datasheet PDF文件第2页浏览型号ISL9R1560S3ST的Datasheet PDF文件第3页浏览型号ISL9R1560S3ST的Datasheet PDF文件第4页浏览型号ISL9R1560S3ST的Datasheet PDF文件第5页浏览型号ISL9R1560S3ST的Datasheet PDF文件第6页浏览型号ISL9R1560S3ST的Datasheet PDF文件第7页 
STEALTHt Diode  
15 A, 600 V  
ISL9R1560G2, ISL9R1560P2,  
ISL9R1560S3S  
Description  
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S is a STEALTH  
diode optimized for low loss performance in high frequency hard  
switched applications. The STEALTH family exhibits low reverse  
www.onsemi.com  
ANODE  
recovery current (I ) and exceptionally soft recovery under typical  
CATHODE  
(BOTTOM SIDE  
METAL)  
rr  
CATHODE  
operating conditions. This device is intended for use as a free wheeling  
or boost diode in power supplies and other power switching  
$Y&Z&3&K  
R1560G2  
applications. The low I and short ta phase reduce loss in switching  
rr  
transistors. The soft recovery minimizes ringing, expanding the range  
of conditions under which the diode may be operated without the use  
of additional snubber circuitry. Consider using the STEALTH diode  
with an SMPS IGBT to provide the most efficient and highest power  
density design at lower cost.  
TO2472LD  
CASE 340CL  
ANODE  
CATHODE  
Features  
$Y&Z&3&K  
R1560P2  
Stealth Recovery t = 29.4 ns (@ I = 15 A)  
rr  
F
CATHODE  
(FLANGE)  
Max Forward Voltage, V = 2.2 V (@ T = 25°C)  
F
C
600 V Reverse Voltage and High Reliability  
Avalanche Energy Rated  
TO2202LD  
CASE 340BA  
CATHODE  
(FLANGE)  
These Devices are PbFree and are RoHS Compliant  
Applications  
SMPS  
$Y&Z&3&K  
R1560S3S  
N/C  
Hard Switched PFC Boost Diode  
UPS Free Wheeling Diode  
Motor Drive FWD  
SMPS FWD  
ANODE  
2
D PAK3 (TO263, 3LEAD)  
CASE 418AJ  
Snubber Diode  
MARKING DIAGRAM  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
R1560G2, R1560P2,  
R1560S3S  
= Specific Device Code  
SYMBOL  
K
A
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2020 Rev. 4  
ISL9R1560S3S/D  

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