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ISL9R18120P2 PDF预览

ISL9R18120P2

更新时间: 2024-09-28 22:26:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
6页 158K
描述
18A, 1200V Stealth⑩ Diode

ISL9R18120P2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.66
其他特性:FREE WHEELING DIODE, SNUBBER DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):3.1 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:18 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大功率耗散:125 W认证状态:Not Qualified
最大重复峰值反向电压:1200 V最大反向恢复时间:0.07 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

ISL9R18120P2 数据手册

 浏览型号ISL9R18120P2的Datasheet PDF文件第2页浏览型号ISL9R18120P2的Datasheet PDF文件第3页浏览型号ISL9R18120P2的Datasheet PDF文件第4页浏览型号ISL9R18120P2的Datasheet PDF文件第5页浏览型号ISL9R18120P2的Datasheet PDF文件第6页 
May 2002  
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S  
18A, 1200V Stealth™ Diode  
General Description  
Features  
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 5.0  
b a  
The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are  
Stealth™ diodes optimized for low loss performance in high  
frequency hard switched applications. The Stealth™ family  
exhibits low reverse recovery current (I  
exceptionally soft recovery under typical operating conditions.  
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 45ns  
rr  
o
Operating Temperature . . . . . . . . . . . . . . . . . . . . 150 C  
) and  
RM(REC)  
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . 1200V  
Avalanche Energy Rated  
This device is intended for use as a free wheeling or boost  
diode in power supplies and other power switching  
Applications  
applications. The low I  
and short t phase reduce loss  
RM(REC)  
a
Switch Mode Power Supplies  
Hard Switched PFC Boost Diode  
UPS Free Wheeling Diode  
Motor Drive FWD  
in switching transistors. The soft recovery minimizes ringing,  
expanding the range of conditions under which the diode may  
be operated without the use of additional snubber circuitry.  
Consider using the Stealth™ diode with a 1200V NPT IGBT to  
provide the most efficient and highest power density design at  
lower cost.  
SMPS FWD  
Snubber Diode  
Formerly developmental type TA49414.  
Package  
Symbol  
JEDEC TO-263AB  
2 LEAD TO-247  
ANODE  
CATHODE  
JEDEC TO-220AC  
ANODE  
K
CATHODE  
CATHODE  
(FLANGE)  
N / C  
ANODE  
A
CATHODE  
(BOTTOM SIDE  
METAL)  
CATHODE  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
1200  
1200  
1200  
18  
Units  
V
V
Repetitive Peak Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RRM  
RWM  
V
V
V
V
R
o
I
Average Rectified Forward Current (T = 92 C)  
A
F(AV)  
C
I
Repetitive Peak Surge Current (20kHz Square Wave)  
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
36  
A
FRM  
I
200  
A
FSM  
P
125  
W
mJ  
°C  
D
E
Avalanche Energy (1A, 40mH)  
20  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 150  
J
STG  
T
Maximum Temperature for Soldering  
L
T
Leads at 0.063in (1.6mm) from Case for 10s  
Package Body for 10s, See Application Note AN-7528  
300  
260  
°C  
°C  
PKG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2002 Fairchild Semiconductor Corporation  
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A  

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