Datasheet > ISL9R3060G2_11

ISL9R3060G2_11

更新时间： 2024-09-29 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管
页数	文件大小	规格书
6页	225K
描述
30A, 600V Stealthâ¢ Diode

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ISL9R3060G2_11 数据手册

May 2011

ISL9R3060G2, ISL9R3060P2

30A, 600V Stealth™ Diode

General Description

Features

•

Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 1.2

b a

The ISL9R3060G2 and ISL9R3060P2 are Stealth™

diodes optimized for low loss performance in high

frequency hard switched applications. The Stealth™ family

Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 35ns

Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 C

exhibits low reverse recovery current (I

exceptionally soft recovery under typical operating

conditions.

) and

RRM

Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Avalanche Energy Rated

This device is intended for use as a free wheeling or boost

diode in power supplies and other power switching

Applications

applications. The low I

and short t phase reduce loss

RRM

•

Switch Mode Power Supplies

Hard Switched PFC Boost Diode

UPS Free Wheeling Diode

Motor Drive FWD

in switching transistors. The soft recovery minimizes

ringing, expanding the range of conditions under which the

diode may be operated without the use of additional

snubber circuitry. Consider using the Stealth™ diode with

an SMPS IGBT to provide the most efficient and highest

power density design at lower cost.

Formerly developmental type TA49411.

SMPS FWD

Snubber Diode

Package

Symbol

CATHODE

(FLANGE)

JEDEC STYLE 2 LEAD TO-247

JEDEC TO-220AC

ANODE

CATHODE

(BOTTOM SIDE

METAL)

CATHODE

ANODE

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

600

Units

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

600

Average Rectified Forward Current

F(AV)

Repetitive Peak Surge Current (20kHz Square Wave)

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

Power Dissipation

FRM

325

FSM

200

°C

Avalanche Energy (1A, 40mH)

AVL

T , T

Operating and Storage Temperature Range

-55 to 175

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

°C

PKG

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

ISL9R3060G2, ISL9R3060P2 Rev. C4

12 3 4 5 6

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与ISL9R3060G2_11相关器件

型号	品牌	获取价格	描述	数据表
ISL9R3060G2_NL	FAIRCHILD	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247, ROHS CO
ISL9R3060G2-F085	ONSEMI	获取价格	600V，30A，2.0V，TO-247（2 引线）Stealth™ 整流器
ISL9R3060P2	FAIRCHILD	获取价格	30A, 600V Stealth⑩ Diode
ISL9R3060P2	ONSEMI	获取价格	30 A、600 V STEALTH? 二极管
ISL9R460P2	FAIRCHILD	获取价格	4A, 600V Stealth⑩ Diode
ISL9R460P2_NL	FAIRCHILD	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC, TO-220
ISL9R460PF2	FAIRCHILD	获取价格	4A, 600V Stealth Diode
ISL9R460PF2	ONSEMI	获取价格	4 A、600 V STEALTH™ 二极管
ISL9R460PF2_09	FAIRCHILD	获取价格	4A, 600V Stealthâ¢ Diode
ISL9R460PF2_NL	FAIRCHILD	获取价格	Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, T

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