Datasheet > ISL9R3060G2-F085

ISL9R3060G2-F085

更新时间： 2024-09-30 11:13:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	377K
描述
600V，30A，2.0V，TO-247（2 引线）Stealth™ 整流器

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ISL9R3060G2-F085 数据手册

STEALTH^EꢀRectifier

30 A, 600 V

ISL9R3060G2-F085

Description

The ISL9R3060G2−F085 is STEALTH diode optimized for low

loss performance in high frequency hard switched applications. The

STEALTH family exhibits low reverse recovery current (I

) and

RRM

www.onsemi.com

exceptionally soft recovery under typical operating conditions.

This device is intended for use as a free wheeling or boost diode in

power supplies and other power switching applications. The low I

RRM

and short t phase reduce loss in switching transistors. The soft

recovery minimizes ringing, expanding the range of conditions under

which the diode may be operated without the use of additional snubber

circuitry. Consider using the STEALTH diode with an SMPS IGBT to

provide the most efficient and highest power density design at lower

cost.

1. Cathode 2. Anode

Features

• High Speed Switching (t = 31 ns(Typ.) @ I = 30 A)

• Low Forward Voltage (V = 2.4 V(Max.) @ I = 30 A)

• Avalanche Energy Rated

• AEC−Q101 Qualified and PPAP Capable

TO−247−2LD

CASE 340CL

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAM

Applications

• Automotive DCDC converter

• Automotive On Board Charger

• Switching Power Supply

• Power Switching Circuits

$Y&Z&3&K

R3060G2

= ON Semiconductor Logo

R3060G2

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

March, 2020 − Rev. 7

ISL9R3060G2−F085/D

12 3 4 5 6 7

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