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ISL9R460S3STS62Z PDF预览

ISL9R460S3STS62Z

更新时间: 2024-09-30 05:55:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 81K
描述
Rectifier Diode, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-263AB,

ISL9R460S3STS62Z 数据手册

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January 2002  
ISL9R460P2, ISL9R460S2, ISL9R460S3S  
4A, 600V Stealth™ Diode  
General Description  
Features  
• Soft Recovery. . . . . . . . . . . . . . . . . . . . . t / t > 3  
b
a
The ISL9R460P2, ISL9R460S2 and ISL9R460S3S are  
Stealth™ diodes optimized for low loss performance in  
high frequency hard switched applications. The  
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t < 20ns  
rr  
o
• Operating Temperature . . . . . . . . . . . . . . . 175 C  
Stealth™ family exhibits low reverse recovery current  
(I  
) and exceptionally soft recovery under typical  
RRM  
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V  
• Avalanche Energy Rated  
operating conditions.  
This device is intended for use as a free wheeling or  
boost diode in power supplies and other power  
switching applications. The low I  
reduce loss in switching transistors. The soft recovery  
minimizes ringing, expanding the range of conditions  
under which the diode may be operated without the use  
of additional snubber circuitry. Consider using the  
Stealth™ diode with an SMPS IGBT to provide the  
most efficient and highest power density design at  
lower cost.  
Applications  
• Switch Mode Power Supplies  
and short t phase  
RRM  
a
• Hard Switched PFC Boost Diode  
• UPS Free Wheeling Diode  
• Motor Drive FWD  
• SMPS FWD  
Formerly developmental type TA49408.  
• Snubber Diode  
Package  
Symbol  
JEDEC TO-263AB  
JEDEC TO-220AC  
JEDEC STYLE TO-262  
K
ANODE  
CATHODE  
CATHODE  
(FLANGE)  
ANODE  
CATHODE  
CATHODE  
(FLANGE)  
A
CATHODE  
(FLANGE)  
N/C  
ANODE  
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
Units  
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
600  
RRM  
V
600  
V
RWM  
V
600  
V
R
I
Average Rectified Forward Current  
4
A
F(AV)  
I
Repetitive Peak Surge Current (20kHz Square Wave)  
8
50  
A
FRM  
I
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)  
Power Dissipation  
A
FSM  
P
58  
W
mJ  
˚C  
D
E
Avalanche Energy (1A, 20mH)  
10  
AVL  
T , T  
Operating and Storage Temperature Range  
-55 to 175  
J
STG  
T
Maximum Temperature for Soldering  
L
T
Leads at 0.063in (1.6mm) from Case for 10s  
Package Body for 10s, See Techbrief TB334  
300  
260  
˚C  
˚C  
PKG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
©2002 Fairchild Semiconductor Corporation  
ISL9R460P2, ISL9R460S2, ISL9R460S3S Rev. B  

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