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ISL9V2040P3 PDF预览

ISL9V2040P3

更新时间: 2024-11-15 22:26:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
8页 191K
描述
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT

ISL9V2040P3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTICPACKAGE-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.56外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:390 V
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR门极发射器阈值电压最大值:2.3 V
门极-发射极最大电压:12 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):130 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AUTOMOTIVE IGNITION晶体管元件材料:SILICON
标称断开时间 (toff):6000 ns标称接通时间 (ton):2780 ns
Base Number Matches:1

ISL9V2040P3 数据手册

 浏览型号ISL9V2040P3的Datasheet PDF文件第2页浏览型号ISL9V2040P3的Datasheet PDF文件第3页浏览型号ISL9V2040P3的Datasheet PDF文件第4页浏览型号ISL9V2040P3的Datasheet PDF文件第5页浏览型号ISL9V2040P3的Datasheet PDF文件第6页浏览型号ISL9V2040P3的Datasheet PDF文件第7页 
April 2002  
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3  
TM  
EcoSPARK 200mJ, 400V, N-Channel Ignition IGBT  
General Description  
Applications  
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the  
next generation ignition IGBTs that offer outstanding SCIS  
capability in the space saving D-Pak (TO-252), as well as the  
industry standard D²-Pak (TO-263) and TO-220 plastic packages.  
This device is intended for use in automotive ignition circuits,  
specifically as a coil driver. Internal diodes provide voltage clamping  
without the need for external components.  
Automotive Ignition Coil Driver Circuits  
Coil- On Plug Applications  
Features  
Space saving D - Pak package available  
o
SCIS Energy = 200mJ at T = 25 C  
J
Logic Level Gate Drive  
EcoSPARK™ devices can be custom made to specific clamp  
voltages. Contact your nearest Fairchild sales office for more  
information.  
Formerly Developmental Type 49444  
Package  
Symbol  
COLLECTOR  
JEDEC TO-252AA  
D-Pak  
JEDEC TO-263AB  
D²-Pak  
JEDEC TO-220AB  
E
C
G
R1  
R2  
GATE  
G
G
E
E
EMITTER  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
430  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 11.5A, L = 3.0mHy  
SCIS  
200  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 8.9A, L = 3.0mHy  
SCIS  
120  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
10  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
10  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
130  
W
D
C
Power Dissipation Derating T > 25°C  
0.87  
-40 to 175  
-40 to 175  
300  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2002 Fairchild Semiconductor Corporation  
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B2, April 2002  

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