Datasheet > ISL9V3036P3

ISL9V3036P3

更新时间： 2024-09-28 22:26:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
8页	195K
描述
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT

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数据手册
替代型号

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ISL9V3036P3 数据手册

April 2002

ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3

EcoSPARK 300mJ, 360V, N-Channel Ignition IGBT

General Description

Applications

•

Automotive Ignition Coil Driver Circuits

Coil- On Plug Applications

The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the

next generation IGBTs that offer outstanding SCIS capability in the

space saving D-Pak (TO-252), as well as the industry standard D²-

Pak (TO-263) and TO-220 plastic packages. These devices are

intended for use in automotive ignition circuits, specifically as a coil

drivers. Internal diodes provide voltage clamping without the need

for external components.

Features

•

Industry Standard D -Pak package

SCIS Energy = 300mJ at T = 25 C

Logic Level Gate Drive

EcoSPARK™ devices can be custom made to specific clamp

voltages. Contact your nearest Fairchild sales office for more

information.

Formerly Developmental Type 49442

Package

Symbol

COLLECTOR

JEDEC TO-252AA

D-Pak

JEDEC TO-263AB

D²-Pak

JEDEC TO-220AB

R₁

R₂

GATE

EMITTER

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Collector to Emitter Breakdown Voltage (I = 1 mA)

Ratings

Units

360

CER

ECS

Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)

T = 25°C, I = 14.2A, L = 3.0 mHy

SCIS

300

SCIS25

T = 150°C, I = 10.6A, L = 3.0 mHy

SCIS

170

SCIS150

Collector Current Continuous, At T = 25°C, See Fig 9

C25

Collector Current Continuous, At T = 110°C, See Fig 9

C110

Gate to Emitter Voltage Continuous

±10

GEM

Power Dissipation Total T = 25°C

150

Power Dissipation Derating T > 25°C

1.0

W/°C

°C

Operating Junction Temperature Range

-40 to 175

300

Storage Junction Temperature Range

STG

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)

Max Lead Temp for Soldering (Package Body for 10s)

Electrostatic Discharge Voltage at 100pF, 1500Ω

260

pkg

ESD

ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C2, April 2002

12 3 4 5 6 7 8

中文翻译

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ISL9V3036P3 替代型号

型号	品牌	替代类型	描述	数据表
ISL9V3036S3ST	ONSEMI	类似代替	360 V、17 A、1.58 V、300 mJ、D2PAKEcoSPARK® I、N 沟

与ISL9V3036P3相关器件

型号	品牌	获取价格	描述	数据表
ISL9V3036S3S	FAIRCHILD	获取价格	EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
ISL9V3036S3SL86Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3036S3SL99Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3036S3ST	FAIRCHILD	获取价格	EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT
ISL9V3036S3ST	ONSEMI	获取价格	360 V、17 A、1.58 V、300 mJ、D2PAKEcoSPARK® I、N 沟
ISL9V3036S3ST-F085C	ONSEMI	获取价格	IGBT, 360V, 17A, 1.58V, 300mJ, D2PAKEcoSPARK®
ISL9V3036S3STL86Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3036S3STL99Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3036S3STS62Z	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3040D3S	FAIRCHILD	获取价格	EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

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