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ISL9V3036S3STS62Z PDF预览

ISL9V3036S3STS62Z

更新时间： 2024-11-16 15:35:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 汽车点火栅晶体管
页数 文件大小 规格书
8页 124K
描述
Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3

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ISL9V3036S3STS62Z 技术参数

生命周期：Obsolete零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknown风险等级：5.15
外壳连接：COLLECTOR最大集电极电流 (IC)：21 A
集电极-发射极最大电压：350 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE晶体管应用：AUTOMOTIVE IGNITION
晶体管元件材料：SILICON标称断开时间 (toff)：7600 ns
标称接通时间 (ton)：2800 nsBase Number Matches：1

ISL9V3036S3STS62Z 数据手册

 浏览型号ISL9V3036S3STS62Z的Datasheet PDF文件第2页浏览型号ISL9V3036S3STS62Z的Datasheet PDF文件第3页浏览型号ISL9V3036S3STS62Z的Datasheet PDF文件第4页浏览型号ISL9V3036S3STS62Z的Datasheet PDF文件第5页浏览型号ISL9V3036S3STS62Z的Datasheet PDF文件第6页浏览型号ISL9V3036S3STS62Z的Datasheet PDF文件第7页 
January 2002  
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3  
TM  
EcoSPARK 300mJ, 360V, N-Channel Ignition IGBT  
General Description  
Applications  
•
•
Automotive Ignition Coil Driver Circuits  
Coil- On Plug Applications  
The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the  
next generation IGBTs that offer outstanding SCIS capability in the  
space saving D-Pak (TO-252), as well as the industry standard D²-  
Pak (TO-263) and TO-220 plastic packages. These devices are  
intended for use in automotive ignition circuits, specifically as a coil  
drivers. Internal diodes provide voltage clamping without the need  
for external components.  
Features  
2
•
•
•
Industry Standard D -Pak package  
o
SCIS Energy = 300mJ at T = 25 C  
J
Logic Level Gate Drive  
EcoSPARK™ devices can be custom made to specific clamp  
voltages. Contact your nearest Fairchild sales office for more  
information.  
Formerly Developmental Type 49442  
Package  
JEDEC TO-252AA JEDEC TO-263AB  
Symbol  
COLLECTOR  
JEDEC TO-220AB  
D-Pak D²-Pak  
R1  
R2  
G
GATE  
G
E
E
EMITTER  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
J
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
360  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
T = 25°C, I = 14.2A, L = 3.0 mHy  
SCIS  
300  
mJ  
mJ  
A
SCIS25  
J
E
T = 150°C, I = 10.6A, L = 3.0 mHy  
SCIS  
170  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
21  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
17  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
150  
W
D
C
Power Dissipation Derating T > 25°C  
1.0  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
-40 to 175  
-40 to 175  
300  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2002 Fairchild Semiconductor Corporation  
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev.C, February 2002  
12345678

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