5秒后页面跳转
捷配首页

Datasheet > ISL9V3040P3-F085C
ISL9V3040P3-F085C PDF预览

ISL9V3040P3-F085C

更新时间： 2024-09-30 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 3121K
描述
IGBT, 400V, 17A, 1.58V, 300mJ, TO-220EcoSPARK® I, N-Channel Ignition

阅读下载

中文翻译

获取价格

ISL9V3040P3-F085C 数据手册

 浏览型号ISL9V3040P3-F085C的Datasheet PDF文件第2页浏览型号ISL9V3040P3-F085C的Datasheet PDF文件第3页浏览型号ISL9V3040P3-F085C的Datasheet PDF文件第4页浏览型号ISL9V3040P3-F085C的Datasheet PDF文件第5页浏览型号ISL9V3040P3-F085C的Datasheet PDF文件第6页浏览型号ISL9V3040P3-F085C的Datasheet PDF文件第7页 
ISL9V3040x3ST-F085C  
EcoSPARKꢀ Ignition IGBT  
300 mJ, 400 V, N−Channel Ignition IGBT  
Features  
• SCIS Energy = 300 mJ at T = 25°C  
J
• Logic Level Gate Drive  
www.onsemi.com  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
COLLECTOR  
Applications  
• Automotive Ignition Coil Driver Circuits  
• High Current Ignition System  
• Coil on Plug Application  
R
1
GATE  
R
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
EMITTER  
Symbol  
Parameter  
Value  
Unit  
V
BV  
400  
Collector to Emitter Breakdown  
Voltage (IC = 1 mA)  
CER  
V
mJ  
mJ  
A
BV  
24  
300  
170  
21  
Emitter to Collector Voltage − Reverse  
ECS  
Battery Condition (IC = 10 mA)  
E
ISCIS = 14.2 A, L = 3.0 mHy,  
SCIS25  
RGE = 1 KW, T = 25°C (Note 1)  
C
E
ISCIS = 10.6 A, L = 3.0 mHy,  
SCIS150  
RGE = 1 KW, T = 150°C (Note 2)  
C
2
DPAK3  
CASE 369AS  
D PAK−3  
IC25  
Collector Current Continuous  
CASE 418AJ  
at VGE = 4.0 V, T = 25°C  
C
A
IC110  
17  
Collector Current Continuous  
MARKING DIAGRAM  
at VGE = 4.0 V, T = 110°C  
C
V
W
V
10  
Gate to Emitter Voltage Continuous  
GEM  
AYWW  
XXX  
XXXXXG  
PD  
Power Dissipation Total, T = 25°C  
150  
1
C
W/°C  
°C  
Power Dissipation Derating, T > 25°C  
C
T , T  
J
−55 to +175  
Operating Junction and Storage  
Temperature  
STG  
A
Y
WW  
XXXX  
G
= Assembly Location  
= Year  
= Work Week  
= Device Code  
= Pb−Free Package  
°C  
°C  
kV  
kV  
T
L
300  
260  
4
Lead Temperature for Soldering  
Purposes (1/8” from case for 10 s)  
T
Reflow Soldering according to  
JESD020C  
PKG  
ESD  
HBM−Electrostatic Discharge Voltage  
at 100 pF, 1500 W  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2  
of this data sheet.  
2
CDM−Electrostatic Discharge Voltage  
at 1 W  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based on  
the test conditions that is starting T = 25°C, L = 3 mHy, ISCIS = 14.2 A,  
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.  
2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based on  
the test conditions that is starting T = 150°C, L = 3mHy, ISCIS = 10.6 A,  
J
VCC = 100 V during inductor charging and VCC = 0 V during time in clamp.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
August, 2019 − Rev. 1  
ISL9V3040−F085C//D  
 
1234567...9

中文翻译

下载PDF

与ISL9V3040P3-F085C相关器件

型号 品牌 获取价格 描述 数据表
ISL9V3040S3 FAIRCHILD

获取价格

 		EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040S3S FAIRCHILD

获取价格

 		EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040S3SL86Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 21A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3040S3SL99Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 21A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3040S3ST FAIRCHILD

获取价格

 		EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040S3ST ONSEMI

获取价格

 		IGBT，400V，17A，1.58V，300mJ，D2PAKEcoSPARK® I，N
ISL9V3040S3ST_NL FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 21A I(C), 390V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
ISL9V3040S3ST-F085C ONSEMI

获取价格

 		EcoSPARK Ignition IGBT
ISL9V3040S3STL86Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 21A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC,
ISL9V3040S3STL99Z FAIRCHILD

获取价格

 		Insulated Gate Bipolar Transistor, 21A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC,

与ISL9V3040P3-F085C相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证