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ISL9V3040S3ST_NL PDF预览

ISL9V3040S3ST_NL

更新时间： 2024-09-29 21:09:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 汽车点火栅晶体管
页数 文件大小 规格书
8页 320K
描述
Insulated Gate Bipolar Transistor, 21A I(C), 390V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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ISL9V3040S3ST_NL 技术参数

生命周期：Obsolete零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknown风险等级：5.59
外壳连接：COLLECTOR最大集电极电流 (IC)：21 A
集电极-发射极最大电压：390 V配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
晶体管应用：AUTOMOTIVE IGNITION晶体管元件材料：SILICON
标称断开时间 (toff)：7600 ns标称接通时间 (ton)：2800 ns
Base Number Matches：1

ISL9V3040S3ST_NL 数据手册

 浏览型号ISL9V3040S3ST_NL的Datasheet PDF文件第2页浏览型号ISL9V3040S3ST_NL的Datasheet PDF文件第3页浏览型号ISL9V3040S3ST_NL的Datasheet PDF文件第4页浏览型号ISL9V3040S3ST_NL的Datasheet PDF文件第5页浏览型号ISL9V3040S3ST_NL的Datasheet PDF文件第6页浏览型号ISL9V3040S3ST_NL的Datasheet PDF文件第7页 
November 2009  
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /  
ISL9V3040S3  
EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT  
®
General Description  
Formerly Developmental Type 49362  
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and  
ISL9V3040S3 are the next generation ignition IGBTs that offer  
outstanding SCIS capability in the space saving D-Pak (TO-252), as  
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-  
220 plastic packages. This device is intended for use in automotive  
ignition circuits, specifically as a coil driver. Internal diodes provide  
voltage clamping without the need for external components.  
Applications  
•
•
Automotive Ignition Coil Driver Circuits  
Coil- On Plug Applications  
Features  
•
•
•
Space saving D-Pak package availability  
SCIS Energy = 300mJ at T = 25 C  
Logic Level Gate Drive  
Qualified to AEC Q101  
RoHS Compliant  
EcoSPARK devices can be custom made to specific clamp  
®
o
J
voltages. Contact your nearest Fairchild sales office for more  
information.  
•
•
Package  
Symbol  
JEDEC TO-263AB  
D²-Pak  
JEDEC TO-220AB  
E
C
G
COLLECTOR  
G
E
R1  
R2  
GATE  
JEDEC TO-262AA  
JEDEC TO-252AA  
D-Pak  
E
C
G
G
EMITTER  
E
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
430  
Units  
V
BV  
BV  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
24  
V
C
E
At Starting T = 25°C, I = 14.2A, L = 3.0 mHy  
SCIS  
300  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 10.6A, L = 3.0 mHy  
SCIS  
170  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
21  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
17  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
150  
W
D
C
Power Dissipation Derating T > 25°C  
1.0  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
-40 to 175  
-40 to 175  
300  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2009 Fairchild Semiconductor Corporation  
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009  
12345678

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