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ISL9V5036S3ST_NL PDF预览

ISL9V5036S3ST_NL

更新时间: 2024-11-16 20:41:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 汽车点火晶体管
页数 文件大小 规格书
8页 133K
描述
Insulated Gate Bipolar Transistor, 46A I(C), 420V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

ISL9V5036S3ST_NL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3针数:3
Reach Compliance Code:not_compliant风险等级:5.35
外壳连接:COLLECTOR最大集电极电流 (IC):46 A
集电极-发射极最大电压:420 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
门极发射器阈值电压最大值:2.2 V门极-发射极最大电压:12 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):200 W认证状态:Not Qualified
最大上升时间(tr):7000 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AUTOMOTIVE IGNITION
晶体管元件材料:SILICON标称断开时间 (toff):13600 ns
标称接通时间 (ton):2800 nsBase Number Matches:1

ISL9V5036S3ST_NL 数据手册

 浏览型号ISL9V5036S3ST_NL的Datasheet PDF文件第2页浏览型号ISL9V5036S3ST_NL的Datasheet PDF文件第3页浏览型号ISL9V5036S3ST_NL的Datasheet PDF文件第4页浏览型号ISL9V5036S3ST_NL的Datasheet PDF文件第5页浏览型号ISL9V5036S3ST_NL的Datasheet PDF文件第6页浏览型号ISL9V5036S3ST_NL的Datasheet PDF文件第7页 
October 2004  
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3  
TM  
EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT  
General Description  
Applications  
Automotive Ignition Coil Driver Circuits  
Coil-On Plug Applications  
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next  
generation IGBTs that offer outstanding SCIS capability in the D²-  
Pak (TO-263) and TO-220 plastic package. These devices are  
intended for use in automotive ignition circuits, specifically as coil  
drivers. Internal diodes provide voltage clamping without the need  
for external components.  
Features  
2
Industry Standard D -Pak package  
o
SCIS Energy = 500mJ at T = 25 C  
J
Logic Level Gate Drive  
EcoSPARK™ devices can be custom made to specific clamp  
voltages. Contact your nearest Fairchild sales office for more  
information.  
Formerly Developmental Type 49443  
Package  
Symbol  
COLLECTOR  
JEDEC TO-263AB  
D²-Pak  
JEDEC TO-220AB  
JEDEC TO-262AA  
E
C
E
G
C
G
R1  
R2  
GATE  
G
E
EMITTER  
COLLECTOR  
(FLANGE)  
COLLECTOR  
(FLANGE)  
Device Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Collector to Emitter Breakdown Voltage (I = 1 mA)  
Ratings  
Units  
V
BV  
BV  
390  
24  
CER  
ECS  
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)  
V
C
E
At Starting T = 25°C, I = 38.5A, L = 670 µHy  
SCIS  
500  
mJ  
mJ  
A
SCIS25  
J
E
At Starting T = 150°C, I = 30A, L = 670 µHy  
SCIS  
300  
SCIS150  
J
I
Collector Current Continuous, At T = 25°C, See Fig 9  
46  
C25  
C
I
Collector Current Continuous, At T = 110°C, See Fig 9  
31  
A
C110  
C
V
Gate to Emitter Voltage Continuous  
±10  
V
GEM  
P
Power Dissipation Total T = 25°C  
250  
W
D
C
Power Dissipation Derating T > 25°C  
1.67  
-40 to 175  
-40 to 175  
300  
W/°C  
°C  
°C  
°C  
°C  
kV  
C
T
Operating Junction Temperature Range  
J
T
Storage Junction Temperature Range  
STG  
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)  
Max Lead Temp for Soldering (Package Body for 10s)  
Electrostatic Discharge Voltage at 100pF, 1500Ω  
L
T
260  
pkg  
ESD  
4
©2004 Fairchild Semiconductor Corporation  
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C3, October 2004  

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